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參數(shù)資料
| 型號(hào)： | MRF9135LR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件頁(yè)數(shù)： | 7/11頁(yè) |
| 文件大小： | 377K |
| 代理商： | MRF9135LR3 |
MRF9135LR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
100
10
22
1
0
60
18
40
16
30
14
20
12
10
20
50
900
865
870
875
880
885
890
895
11
19
860
60
35
IRL
Gps
ACPR
VDD = 26 Vdc
Pout = 25 W (Avg.)
IDQ = 1100 mA
NCDMA IS95 Pilot, Sync, Paging
Traffic Codes 8 through 13
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit
Performance
G
ps
,POWER
GAIN
(dB)
18
30
17
25
16
20
15
20
14
30
13
40
12
50
18
10
12
14
16
INPUT
RETURN
LOSS
(dB)
IRL,
ACPR
(dBc)
100
15.5
19
1
IDQ = 1650 mA
1320 mA
VDD = 26 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Power Gain versus Output Power
G
ps
,POWER
GAIN
(dB)
18.5
18
17.5
17
16.5
16
1100 mA
880 mA
10
100
60
1
1650 mA
IDQ = 880 mA
VDD = 26 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion versus
Output Power
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
20
30
40
50
10
1100 mA
1320 mA
100
80
10
1
7th Order
VDD = 26 Vdc
IDQ = 1100 mA
f1 = 880 MHz, f2 = 880.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
INTERMODULA
TION
DIST
O
R
T
ION
(dBc)
IMD,
20
30
40
50
60
70
10
5th Order
3rd Order
Gps
VDD = 26 Vdc
IDQ = 1100 mA
f1 = 880 MHz
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Power Gain and Efficiency versus
Output Power
G
ps
,POWER
GAIN
(dB)
ηD
η
D
,DRAIN
EFFICIENCY
(%)
ηD
η
D,
DRAIN
EFFICIENCY
(%)
LIFETIME
BUY
LAST
ORDER
3
OCT
08
LAST
SHIP
14
MA
Y
09
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參數(shù)描述 |
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| MRF9135LR5 | 功能描述:射頻MOSFET電源晶體管 135W 900MHZ LDMOS NI780L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9135LSR3 | 功能描述:射頻MOSFET電源晶體管 RF PWR LDMOS NI780LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9135LSR5 | 功能描述:射頻MOSFET電源晶體管 RF PWR LDMOS NI780LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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