參數(shù)資料
型號(hào)： MRF9135LR3
廠商： FREESCALE SEMICONDUCTOR INC
元件分類(lèi)： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN
文件頁(yè)數(shù)： 4/11頁(yè)
文件大?。?/td> 377K
代理商： MRF9135LR3
2
RF Device Data
Freescale Semiconductor
MRF9135LR3
Table 4. Electrical Characteristics (TC = 25°C, 50 ohm system unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 450 μA)
VGS(th)
2
2.8
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 1100 mAdc)
VGS(Q)
3.25
3.7
5
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 3 Adc)
VDS(on)
—
0.19
0.4
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 9 Adc)
gfs
—
12
—
S
Dynamic Characteristics
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
109
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
4.4
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier,
PAR = 9.8 dB @ 0.01% Probability on CCDF
Common-Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 25 W Avg. N-CDMA, IDQ = 1100 mA,
f = 880.0 MHz)
Gps
16
17.8
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 25 W Avg. N-CDMA, IDQ = 1100 mA,
f = 880.0 MHz)
η
22
25
—
%
Adjacent Channel Power Ratio
(VDD = 26 Vdc, Pout = 25 W Avg. N-CDMA, IDQ = 1100 mA,
f = 880.0 MHz; ACPR @ 25 W, 1.23 MHz Bandwidth, 750 kHz
Channel Spacing)
ACPR
—
-47
-45
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 25 W Avg. N-CDMA, IDQ = 1100 mA,
f = 880.0 MHz)
IRL
—
-13.5
-9
dB
Common-Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 25 W Avg. N-CDMA, IDQ = 1100 mA,
f = 865 MHz and 895 MHz)
Gps
—
17
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 25 W Avg. N-CDMA, IDQ = 1100 mA,
f = 865 MHz and 895 MHz)
η
—
24
—
%
Adjacent Channel Power Ratio
(VDD = 26 Vdc, Pout = 25 W Avg. N-CDMA, IDQ = 1100 mA,
f = 865 MHz and 895 MHz; ACPR @ 25 W, 1.23 MHz Bandwidth, 750
kHz Channel Spacing)
ACPR
—
-46
—
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 25 W Avg. N-CDMA, IDQ = 1100 mA,
f = 865 MHz and 895 MHz)
IRL
—
-12.5
—
dB
LIFETIME
BUY
LAST
ORDER
3
OCT
08
LAST
SHIP
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