參數(shù)資料
型號: MRF9045MR1
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
封裝: PLASTIC, CASE 1265-08, 2 PIN
文件頁數(shù): 7/16頁
文件大?。?/td> 572K
代理商: MRF9045MR1
MRF9045MR1 MRF9045MBR1
15
RF Device Data
Freescale Semiconductor
TO-272 DUAL LEAD
PLASTIC
MRF9045MBR1
CASE 1337-03
ISSUE C
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DATUM PLANE H IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE H.
5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE "b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS A AND B TO BE DETERMINED AT
DATUM PLANE H.
7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY.
8. CROSSHATCHING REPRESENTS THE EXPOSED
AREA OF THE HEAT SLUG.
H
C
A
B
SEATING
PLANE
DATUM
PLANE
2X
b1
A
E1
r1
DRAIN
LEAD
D
D1
E
NOTE 8
Y
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
.100
.104
2.54
2.64
INCHES
A1
.039
.043
0.99
1.09
A2
.040
.042
1.02
1.07
D
.928
.932
23.57
23.67
D1
E
.438
.442
11.12
11.23
E1
.248
.252
6.30
6.40
F
b1
.193
c1
.007
.011
.18
r1
.063
.068
1.60
aaa
1
VIEW Y-Y
.810 BSC
.004
20.57 BSC
.10
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
.025 BSC
.28
1.73
PIN 3
A1
A2
F
ZONE "J"
7
B
aaa M
CA
aaa M
CA
2X
.199
4.90
0.64 BSC
5.05
c1
2
DRAIN ID
GATE
LEAD
E2
E2
.241
.245
6.12
6.22
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MRF9045MBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
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