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參數(shù)資料
| 型號： | MRF9045MR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| 封裝： | PLASTIC, CASE 1265-08, 2 PIN |
| 文件頁數(shù)： | 12/16頁 |
| 文件大?。?/td> | 572K |
| 代理商： | MRF9045MR1 |
AR
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HIVE
INF
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RMA
TI
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ARCHIVE
INFORMA
TION
MRF9045MR1 MRF9045MBR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
960
12
20
38
50
IRL
IMD
f, Frequency (MHz)
Figure 5. Class AB Broadband Circuit
Performance
G
ps
,POWER
GAIN
(dB)
18
40
17
35
16
30
19
45
15
32
14
34
13
36
955
950
945
940
935
930
VDD = 28 Vdc
Pout = 45 W (PEP)
IDQ = 350 mA
TwoTone Measurement
100 kHz Tone Spacing
100
17
21
IDQ = 525 mA
420 mA
VDD = 28 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Power Gain versus Output Power
G
ps
,POWER
GAIN
(dB)
350 mA
280 mA
20.5
20
19.5
19
18.5
18
17.5
10
1
0.1
100
15
IDQ = 280 mA
350 mA
VDD = 28 Vdc
f1 = 945 MHz,
f2 = 945.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion versus
Output Power
INTERMODULA
TION
DIST
O
R
T
ION
(dBc)
IMD,
420 mA
525 mA
20
25
30
35
40
45
50
55
10
1
0.1
100
10
1
7th Order
VDD = 28 Vdc
IDQ = 350 mA
f1 = 945 MHz
f2 = 945.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Intermodulation Distortion Products
versus Output Power
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
3rd Order
5th Order
20
30
40
50
60
70
80
10
Figure 9. Power Gain and Efficiency versus
Output Power
η
Gps
10
18
14
,DRAINh
EFFICIENCY
(%)
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
IRL,
INPUT
RETURN
LOSS
(dB)
12
16
100
20
0
50
η
VDD = 28 Vdc
IDQ = 350 mA
f = 945 MHz
Pout, OUTPUT POWER (WATTS) AVG.
G
ps
,POWER
GAIN
(dB)
14
30
10
20
12
10
40
110
Gps
22
16
18
60
,DRAIN
EFFICIENCY
(%)
η
0.1
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| MRF9045MBR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF9045NBR1 | 功能描述:IC MOSFET RF N-CHAN TO272-2 RoHS:否 類別:分離式半導體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF9045NR1 | 功能描述:射頻MOSFET電源晶體管 45W 1GHZ RF LDMOS TO270N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9045NR1-CUT TAPE | 制造商:Freescale 功能描述:MRF9045 Series 945 MHz 45 W 28 V Lateral N-Channel RF Power MOSFET |
| MRF9045S | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391BVAR |
| MRF904SNR1 | 制造商:Freescale Semiconductor 功能描述: |
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