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參數(shù)資料
| 型號： | MRF9030S |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 360C-05, 3 PIN |
| 文件頁數(shù)： | 12/13頁 |
| 文件大?。?/td> | 285K |
| 代理商： | MRF9030S |
5.2–137
MRF9030MR1
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies up to 1.0 GHz. The high gain and broadband performance of this device
make it ideal for large–signal, common–source amplifier applications in 26 volt
base station equipment.
Typical Performance at 945 MHz, 26 Volts
Output Power — 30 Watts PEP
Power Gain — 19.2 dB
Efficiency — 41% (Two Tone)
IMD — –31.2 dBc
Integrated ESD Protection
Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts (CW)
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
Moisture Sensitivity Level 3
Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
+15, –0.5
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
139
0.93
Watts
W/
°C
Storage Temperature Range
Tstg
–65 to +150
°C
Operating Junction Temperature
TJ
175
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
1.08
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF9030MR1
945 MHz, 30 W, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 1265–07, STYLE 1
(TO–270)
PLASTIC
REV 2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
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| MRF9045GMR1 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRF9045GNR1 | 功能描述:射頻MOSFET電源晶體管 45W 945MHZ LDMOS TO270N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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