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參數(shù)資料
| 型號： | MRF9030MR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
| 封裝： | PLASTIC, CASE 1265-08, 2 PIN |
| 文件頁數(shù)： | 12/16頁 |
| 文件大?。?/td> | 567K |
| 代理商： | MRF9030MR1 |
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INFORMA
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MRF9030MR1 MRF9030MBR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Gps
960
14
22
930
38
50
IRL
η
IMD
VDD = 26 Vdc
Pout = 30 W (PEP)
IDQ = 250 mA
TwoTone, 100 kHz Tone Spacing
f, FREQUENCY (MHz)
Figure 4. Class AB Broadband Circuit Performance
G
ps
,POWER
GAIN
(dB)
10
18
14
,DRAINh
EFFICIENCY
(%)
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
IRL,
INPUT
RETURN
LOSS
(dB)
12
16
21
45
20
40
19
35
18
30
17
32
16
34
15
36
955
950
945
940
935
100
18.5
21.5
0.1
IDQ = 375 mA
300 mA
VDD = 26 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Power Gain versus Output Power
G
ps
,POWER
GAIN
(dB)
21
20.5
20
19.5
19
10
1
250 mA
200 mA
100
55
15
0.1
IDQ = 200 mA
375 mA
VDD = 26 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion versus
Output Power
INTERMODULA
TION
DIST
O
R
T
ION
(dBc)
IMD,
20
25
30
35
40
45
50
10
1
250 mA
300 mA
100
80
10
0.1
7th Order
VDD = 26 Vdc
IDQ = 250 mA
f1 = 945 MHz
f2 = 945.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
20
30
40
50
60
70
10
1
5th Order
3rd Order
100
10
22
0.1
0
60
Gps
η
VDD = 26 Vdc
IDQ = 250 mA
f = 945 MHz
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. Power Gain and Efficiency versus
Output Power
G
ps
,POWER
GAIN
(dB)
,DRAIN
EFFICIENCY
(%)
η
20
50
18
40
16
30
14
20
12
10
1
相關(guān)PDF資料 |
PDF描述 |
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| MRF9030NR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF9030S | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF9045MR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF9045MBR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF9045NR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF9030MR1_07 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9030NBR1 | 功能描述:IC MOSFET RF N-CHAN TO272-2 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF9030NR1 | 功能描述:射頻MOSFET電源晶體管 30W RF PWR FET TO-270N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9030NR1_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF9030R1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
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