參數(shù)資料
型號(hào)： MRF9030MR1
廠商： FREESCALE SEMICONDUCTOR INC
元件分類(lèi)： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
封裝： PLASTIC, CASE 1265-08, 2 PIN
文件頁(yè)數(shù)： 1/16頁(yè)
文件大?。?/td> 567K
代理商： MRF9030MR1
AR
C
HIVE
INF
O
RMA
TI
O
N
ARCHIVE
INFORMA
TION
Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part
replacement. N suffix added to part number to indicate transition to lead-free terminations.
MRF9030MR1 MRF9030MBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common-source amplifier applications
in 26 volt base station equipment.
Typical Performance at 945 MHz, 26 Volts
Output Power — 30 Watts PEP
Power Gain — 20 dB
Efficiency — 41% (Two Tones)
IMD — -31 dBc
Integrated ESD Protection
Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
Dual-Lead Boltdown Plastic Package Can Also Be Used As Surface
Mount.
200_C Capable Plastic Package
TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
- 0.5, +65
Vdc
Gate-Source Voltage
VGS
- 0.5, + 15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
139
0.93
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
1.08
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
Charge Device Model
MRF9030MR1
MRF9030MBR1
C7 (Minimum)
C6 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF9030M
Rev. 9, 5/2006
Freescale Semiconductor
Technical Data
MRF9030MR1
MRF9030MBR1
945 MHz, 30 W, 26 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1337-03, STYLE 1
TO-272-2
PLASTIC
MRF9030MBR1
CASE 1265-08, STYLE 1
TO-270-2
PLASTIC
MRF9030MR1
Freescale Semiconductor, Inc., 2006. All rights reserved.
相關(guān)PDF資料
PDF描述
MRF9030NR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF9030S UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF9045MR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF9045MBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF9045NR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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