參數(shù)資料
型號: MRF8S8260HSR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN
文件頁數(shù): 10/14頁
文件大小: 576K
代理商: MRF8S8260HSR3
MRF8S8260HR3 MRF8S8260HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
IR
L,
IN
PU
T
RETU
RN
LO
SS
(d
B)
820
ACPR
f, FREQUENCY (MHz)
Figure 2. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 70 Watts Avg.
--4
--12
15
25
--41
38
36
34
--37
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
G
ps
,P
OWER
GAIN
(d
B)
24
23
21
840
860
880
900
920
940
960
980
--36
--20
PA
RC
(d
B)
--1.8
--1
--2
AC
PR
(d
Bc)
Figure 3. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
--70
--30
--40
--60
1
100
IM
D,
INT
ERM
O
DULA
TIO
N
DIST
O
RT
ION
(dBc
)
--50
IM5--U
IM5--L
Figure 4. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
--1
--3
--5
0
--2
--4
OU
TPU
T
CO
MPR
ESSION
AT
0.
01
%
PROBABILITY
ON
CCDF
(dB)
40
60
140
20
56
50
44
38
32
26
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
--1dB = 63.8W
ηD
AC
PR
(d
Bc)
--55
--25
--30
--35
--45
--40
--50
22
G
ps
,P
OWER
GAIN
(d
B)
21.5
20.5
19.5
VDD =28 Vdc,IDQ = 1500 mA, f = 875 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
--2dB = 89.6W
--3dB = 119.8W
0
80
100
ACPR
--20
120
Gps
PARC
16
17
18
19
20
22
32
30
--38
--39
--40
--8
--16
--1.6
--1.4
--1.2
21
20
19
IM7--L
IM7--U
PARC
VDD =28 Vdc,Pout = 80 W (PEP), IDQ = 1500 mA
Two--Tone Measurements, (f1 + f2)/2 = Center
Frequency of 875 MHz
IM3--U
IM3--L
ηD
IRL
VDD =28 Vdc,Pout =70 W (Avg.),IDQ = 1500 mA
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
Gps
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