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參數(shù)資料
| 型號： | MRF8S26060HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CASE 465I-02, NI-400-240, 2 PIN |
| 文件頁數(shù)： | 11/14頁 |
| 文件大?。?/td> | 220K |
| 代理商： | MRF8S26060HR3 |
6
RF Device Data
Freescale Semiconductor
MRF8S26060HR3 MRF8S26060HSR3
TYPICAL CHARACTERISTICS
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Single-Carrier W-CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-10
8
20
60
40
30
20
10
η
D
,DRAIN
EFFICIENCY
(%)
G
ps
,POWER
GAIN
(dB)
18
100
-60
ACPR
(dBc)
16
0
-20
-30
Figure 6. Broadband Frequency Response
0
18
2200
f, FREQUENCY (MHz)
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 450 mA
9
GAIN
(dB)
15
Gain
2300
2700
3000
IRL
-18
0
-9
-12
-15
IRL
(dB)
14
12
50
-50
-40
3
12
-6
-3
10
1
2690 MHz
6
10
2400
2500
2600
2800
2900
0
ηD
Gps
2655 MHz
2620 MHz
2690 MHz
2655 MHz
2620 MHz
VDD = 28 Vdc, IDQ = 450 mA, Single-Carrier W-CDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
W-CDMA TEST SIGNAL
0.0001
100
0
PEAK-T O-A VERAGE (dB)
Figure 7. CCDF W-CDMA IQ Magnitude
Clipping, Single-Carrier Test Signal
10
1
0.1
0.01
0.001
24
6
8
PROBABILITY
(%)
W-CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @
±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
Input Signal
10
-60
-100
10
(dB)
-20
-30
-40
-50
-70
-80
-90
3.84 MHz
Channel BW
7.2
1.8
5.4
3.6
0
-1.8
-3.6
-5.4
-9
9
f, FREQUENCY (MHz)
Figure 8. Single-Carrier W-CDMA Spectrum
-7.2
-ACPR in 3.84 MHz
Integrated BW
+ACPR in 3.84 MHz
Integrated BW
-10
0
13
57
9
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF8S26060HR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2.6GHZ 13.5W NI400 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S26060HSR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2.6GHZ 13.5W NI400S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S26060HSR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2.6GHZ 13.5W NI400S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S26120HR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2.6GHZ 27W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S26120HR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2.6GHZ 27W NI780 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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