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參數(shù)資料
| 型號： | MRF8S21200HR6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件頁數(shù)： | 7/14頁 |
| 文件大小： | 580K |
| 代理商： | MRF8S21200HR6 |
2
RF Device Data
Freescale Semiconductor
MRF8S21200HR6 MRF8S21200HSR6
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =65 Vdc, VGS =0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS =28 Vdc, VGS =0 Vdc)
IDSS
—
1
μAdc
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS =10 Vdc, ID = 300 μAdc)
VGS(th)
1.2
2.0
2.7
Vdc
Gate Quiescent Voltage
(VDD =28 Vdc, ID = 1400 mA, Measured in Functional Test)
VGS(Q)
2.0
2.7
3.5
Vdc
Drain--Source On--Voltage
(VGS =10 Vdc, ID =3 Adc)
VDS(on)
0.1
0.17
0.3
Vdc
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 1400 mA, Pout = 48 W Avg., f = 2140 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5MHz Offset.
Power Gain
Gps
16.5
18.1
19.5
dB
Drain Efficiency
ηD
30.0
32.6
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
5.7
6.3
—
dB
Adjacent Channel Power Ratio
ACPR
—
--37.1
--35.0
dBc
Input Return Loss
IRL
—
--15
--7
dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 1400 mA, Pout =48 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2110 MHz
17.8
32.6
6.4
--37.7
--15
2140 MHz
18.1
32.6
6.3
--37.1
--15
2170 MHz
18.1
32.9
6.2
--36.2
--13
1. Part internally matched both on input and output.
(continued)
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相關(guān)代理商/技術(shù)參數(shù) |
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| MRF8S21200HR6_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF8S21200HSR5 | 功能描述:射頻無線雜項 HV8 2.1GHZ 48W NI1230HS RoHS:否 制造商:Texas Instruments 工作頻率:112 kHz to 205 kHz 電源電壓-最大:3.6 V 電源電壓-最小:3 V 電源電流:8 mA 最大功率耗散: 工作溫度范圍:- 40 C to + 110 C 封裝 / 箱體:VQFN-48 封裝:Reel |
| MRF8S21200HSR6 | 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 48W NI1230HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S23120H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF8S23120HR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2.3GHZ 120W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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