參數(shù)資料
型號: MRF8S19260HSR6
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, CASE 375J-02, NI-1230S-8, 8 PIN
文件頁數(shù): 10/14頁
文件大?。?/td> 483K
代理商: MRF8S19260HSR6
MRF8S19260HR6 MRF8S19260HSR6
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
IR
L,
IN
PU
T
RETU
RN
LO
SS
(d
B)
1880
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 3. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 74 Watts Avg.
--13
--5
--7
--9
--11
15
20
19.5
19
--38
36
35
34
33
--30.5
--32
--33.5
--35
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
ηD
G
ps
,P
OWER
GAIN
(d
B) 18.5
18
17.5
17
16.5
16
15.5
1900
1920
1940
1960
1980
2000
2020 2040
32
--36.5
--15
PARC
PA
RC
(d
B)
--2.2
--1
--1.3
--1.6
--1.9
--2.5
AC
PR
(d
Bc)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
--60
--10
--20
--30
--50
1
100
IM
D,
INT
ERM
O
DULA
TIO
N
DIST
O
RT
ION
(dBc
)
--40
IM5--L
IM7--L
IM7--U
VDD =30 Vdc,Pout = 220 W (PEP), IDQ = 1600 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
--1
--3
--5
40
0
--2
--4
OU
TPU
T
CO
MPR
ESSION
AT
0.
01
%
PROBABILITY
ON
CCDF
(dB)
20
60
80
120
12
42
37
32
27
22
17
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
--1 dB = 57 W
100
ηD
ACPR
PARC
AC
PR
(d
Bc)
--55
--25
--30
--35
--45
--40
--50
18.7
G
ps
,P
OWER
GAIN
(d
B)
Gps
IM3--U
IM3--L
--2 dB = 80 W
--3 dB = 108 W
VDD =30 Vdc,IDQ = 1600 mA, f = 1960 MHz, Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
VDD =30 Vdc,Pout =74 W (Avg.),IDQ = 1600 mA
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
IM5--U
18.5
18.3
18.1
17.9
17.7
17.5
相關PDF資料
PDF描述
MRF8S21100HR5 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF8S21100HR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF8S21100HSR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF8S21120HR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF8S21140HSR3 S BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
MRF8S21100HR3 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 100W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF8S21100HR5 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 100W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF8S21100HSR3 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 100W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF8S21100HSR5 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 100W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF8S21120HR3 功能描述:射頻MOSFET電源晶體管 HV8 2.1GHZ 120W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray