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參數(shù)資料
| 型號(hào)： | MRF8S18260HSR6 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-1230S, CASE 375J-02, 8 PIN |
| 文件頁數(shù)： | 7/14頁 |
| 文件大小： | 371K |
| 代理商： | MRF8S18260HSR6 |
2
RF Device Data
Freescale Semiconductor
MRF8S18260HR6 MRF8S18260HSR6
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (1)
Zero Gate Voltage Drain Leakage Current
(VDS =65 Vdc, VGS =0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS =28 Vdc, VGS =0 Vdc)
IDSS
—
1
μAdc
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
—
1
μAdc
On Characteristics (1)
Gate Threshold Voltage
(VDS =10 Vdc, ID = 400 μAdc)
VGS(th)
1.1
1.9
2.6
Vdc
Gate Quiescent Voltage
(VDS =30 Vdc, ID = 1600 mA)
VGS(Q)
—
2.6
—
Vdc
Fixture Gate Quiescent Voltage
(VDD =30 Vdc, ID = 1600 mA, Measured in Functional Test)
VGG(Q)
4.3
5.1
5.8
Vdc
Drain--Source On--Voltage
(VGS =10 Vdc, ID =4 Adc)
VDS(on)
0.1
0.15
0.3
Vdc
Functional Tests (1,2) (In Freescale Test Fixture, 50 ohm system) VDD =30 Vdc, IDQ = 1600 mA, Pout = 74 W Avg., f = 1805 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5MHz Offset.
Power Gain
Gps
16.8
17.9
19.0
dB
Drain Efficiency
ηD
29.0
31.6
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
5.4
6.0
—
dB
Adjacent Channel Power Ratio
ACPR
—
--35.0
--32.0
dBc
Input Return Loss
IRL
—
--19
--7
dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD =30 Vdc, IDQ = 1600 mA, Pout = 74 W Avg., Single--Carrier
W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth
@
±5MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1805 MHz
17.9
31.6
6.0
--35.0
--19
1840 MHz
17.9
31.9
6.0
--36.0
--18
1880 MHz
17.9
32.5
5.9
--36.0
--8
1. Gates (Pins 2, 3) and drains (Pins 6, 7) are connected internally.
2. Part internally matched both on input and output.
(continued)
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| MRF8S19140HR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 140W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S19140HR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 140W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S19140HS | 制造商:Freescale Semiconductor 功能描述: |
| MRF8S19140HSR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 140W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S19140HSR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 140W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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