參數(shù)資料
型號(hào): MRF8S18260HR6
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-1230, CASE 375I-03, 8 PIN
文件頁數(shù): 10/14頁
文件大?。?/td> 371K
代理商: MRF8S18260HR6
MRF8S18260HR6 MRF8S18260HSR6
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
IR
L,
IN
PU
T
RETU
RN
LOSS
(d
B)
1760
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 3. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 74 Watts Avg.
--20
--0
--5
--10
--15
16.8
18.8
18.6
18.4
--38
35
34
33
32
--33
--34
--35
--36
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
ηD
G
ps
,P
OWER
GAIN
(d
B) 18.2
18
17.8
17.6
17.4
17.2
17
1780
1800
1820
1840
1860
1880
1900 1920
31
--37
--25
PARC
PA
RC
(d
B)
--2
--1.2
--1.4
--1.6
--1.8
--2.2
AC
PR
(d
Bc)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
--60
--10
--20
--30
--50
1
100
IM
D,
INT
ERM
O
DULA
TIO
N
DIST
O
RT
ION
(dBc
)
--40
IM5--L
IM7--U
VDD =30 Vdc,Pout = 100 W (PEP), IDQ = 1600 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1840 MHz
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
--1
--3
--5
50
0
--2
--4
OU
TPU
T
COMPR
ESSION
AT
0.
01
%
PROBABILITY
ON
CCDF
(dB)
30
70
90
130
0
60
50
40
30
20
10
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
--1 dB = 60 W
110
ηD
ACPR
AC
PR
(d
Bc)
--50
--20
--25
--30
--40
--35
--45
18.6
G
ps
,P
OWER
GAIN
(d
B)
Gps
IM3--U
IM3--L
--2 dB = 85 W
VDD =30 Vdc,Pout =74 W(Avg.),IDQ = 1600 mA
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
IM5--U
18.4
18.2
18
17.8
17.6
17.4
IM7--L
--3dB = 115W
VDD =30 Vdc,IDQ = 1600 mA, f = 1840 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
PARC
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