參數(shù)資料
型號: MRF8P20165WHSR5
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-780S-4, CASE 465H-02, 4 PIN
文件頁數(shù): 9/16頁
文件大?。?/td> 738K
代理商: MRF8P20165WHSR5
2
RF Device Data
Freescale Semiconductor
MRF8P20165WHR3 MRF8P20165WHSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1C (Minimum)
Machine Model (per EIA/JESD22--A115)
B (Minimum)
Charge Device Model (per JESD22--C101)
III (Minimum)
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (1)
Zero Gate Voltage Drain Leakage Current
(VDS =65 Vdc, VGS =0 Vdc)
IDSS
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS =28 Vdc, VGS =0 Vdc)
IDSS
5
μAdc
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
1
μAdc
On Characteristics (2)
Gate Threshold Voltage (1)
(VDS =10 Vdc, ID = 232 μAdc)
VGS(th)
1.2
1.8
2.7
Vdc
Gate Quiescent Voltage
(VDD =28 Vdc, IDA = 550 mAdc, Measured in Functional Test)
VGS(Q)
2.0
2.7
3.5
Vdc
Drain--Source On--Voltage (1)
(VGS =10 Vdc, ID =1.5 Adc)
VDS(on)
0.05
0.2
0.3
Vdc
Functional Tests (2,3,4) (In Freescale Doherty Production Test Fixture, 50 ohm system) VDD =28 Vdc, IDQA = 550 mA, VGSB =1.3 Vdc,
Pout = 37 W Avg., f1 = 1980 MHz, f2 = 2010 MHz, 2--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.8 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5MHz Offset.
Power Gain
Gps
14.2
14.8
17.2
dB
Drain Efficiency
ηD
40.6
44.3
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
5.2
5.8
dB
Adjacent Channel Power Ratio
ACPR
--31.0
--28.7
dBc
Typical Broadband Performance (4) (In Freescale Doherty Characterization Test Fixture, 50 ohm system) VDD =28 Vdc, IDQA = 550 mA,
VGSB =1.3 Vdc, Pout = 37 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1930 MHz
16.1
47.0
7.1
--27.7
1960 MHz
16.3
47.7
7.1
--29.7
1995 MHz
16.3
46.0
7.0
--33.3
1. Side A and Side B are tied together for this measurement.
2. VDDA and VDDB must be tied together and powered by a single DC power supply.
3. Part internally matched both on input and output.
4. Measurement made with device in a Symmetrical Doherty configuration.
(continued)
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