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參數(shù)資料
| 型號： | MRF8P20160HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780, CASE 465M-01, 4 PIN |
| 文件頁數(shù)： | 16/17頁 |
| 文件大?。?/td> | 807K |
| 代理商： | MRF8P20160HR3 |
8
RF Device Data
Freescale Semiconductor
MRF8P20160HR3 MRF8P20160HSR3
VDD =28 Vdc,IDQA = 550 mA
f
MHz
Max Pout (1)
Zsource
Zload
Watts
dBm
1880
98
49.9
5.14 -- j9.41
1.56 -- j5.24
1900
98
49.9
7.59 -- j9.88
1.58 -- j5.37
1920
97
49.9
8.90 -- j9.65
1.57 -- j5.48
(1) Maximum output power measurement reflects pulsed 1 dB gain compression.
Zsource = Test circuit impedance as measured from gate contact to ground.
Zload = Test circuit impedance as measured from drain contact to ground.
Figure 11. Maximum Output Power — Doherty Load Pull Optimization for Carrier Side
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
VDD =28 Vdc,IDQA = 550 mA
f
MHz
Max Eff. (1)
%
Zsource
Zload
1880
65.1
5.14 -- j9.41
3.04 -- j3.65
1900
64.6
7.59 -- j9.88
4.13 -- j2.87
1920
64.6
8.90 -- j9.65
4.12 -- j3.15
(1) Maximum efficiency measurement reflects pulsed 1 dB gain compression.
Zsource = Test circuit impedance as measured from gate contact to ground.
Zload = Test circuit impedance as measured from drain contact to ground.
Figure 12. Maximum Efficiency — Doherty Load Pull Optimization for Carrier Side
Z source
Z load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
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相關代理商/技術參數(shù) |
參數(shù)描述 |
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| MRF8P20160HR5 | 功能描述:DISCRETE RF FET RoHS:是 類別:分離式半導體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF8P20160HSR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 160W NI780HS-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P20160HSR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 160W NI780HS-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P20161HSR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 161W NI780HS-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P20161HSR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 161W NI780HS-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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