參數(shù)資料
型號: MRF7S19100NR1
廠商: 飛思卡爾半導體(中國)有限公司
英文描述: RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
中文描述: 射頻功率場效應晶體管N溝道增強型MOSFET的外側(cè)
文件頁數(shù): 4/15頁
文件大小: 544K
代理商: MRF7S19100NR1
4
RF Device Data
Freescale Semiconductor
MRF7S19100NR1 MRF7S19100NBR1
Figure 1. MRF7S19100NR1(NBR1) Test Circuit Schematic
Z8
Z9
Z10
Z11
Z12, Z13
PCB
0.319
x 0.880
Microstrip
0.390
x 0.215
Microstrip
0.627
x 0.084
Microstrip
0.743
x 0.084
Microstrip
1.326
x 0.121
Microstrip
Arlon AD250, 0.030
,
ε
r
= 2.5
Z1
Z2
Z3
Z4
Z5
Z6
Z7
0.744
x 0.084
Microstrip
0.383
x 0.084
Microstrip
0.600
x 0.230
Microstrip
0.505
x 0.800
Microstrip
1.086
x 0.080
Microstrip
0.452
x 0.080
Microstrip
0.161
x 0.880
Microstrip
V
BIAS
V
SUPPLY
RF
OUTPUT
RF
INPUT
DUT
C1
C2
C3
C4
C5
C6
R1
Z1
Z2
Z3
C7
Z8
C8
Z10
Z7
R2
Z5
R3
Z4
Z11
Z12
Z13
V
SUPPLY
C9
C10
C11
+
Z9
Z6
Table 6. MRF7S19100NR1(NBR1) Test Circuit Component Designations and Values
Part
C1
10
μ
F, 35 V Tantalum Capacitor
C2, C5, C6, C10, C11
10
μ
F, 50 V Chip Capacitors
C3, C7
5.1 pF Chip Capacitors
C4, C9
8.2 pF Chip Capacitors
C8
10 pF Chip Capacitor
R1
1 K
Ω,
1/4 W Chip Resistor
R2
10 K
Ω,
1/4 W Chip Resistor
R3
10
Ω,
1/4 W Chip Resistor
Description
Part Number
Manufacturer
Kemet
Murata
ATC
ATC
ATC
Vishay
Vishay
Vishay
T491D106K035AT
GRM55DR61H106KA88L
600B5R1BT250XT
600B8R2BT250XT
600B100BT250XT
CRCW12061001F100
CRCW12061002F100
CRCW120610R0F100
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相關代理商/技術參數(shù)
參數(shù)描述
MRF7S19100NR1_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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MRF7S19120NR1_09 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF7S19170HR3 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 50W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S19170HR3_08 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs