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參數(shù)資料
| 型號(hào)： | MRF10120 |
| 廠商： | MOTOROLA INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Microwave Power Transistor, NPN Silicon(微波NPN硅射頻功率晶體管) |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, CASE 355C-02, 2 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 98K |
| 代理商： | MRF10120 |
1
MRF10120
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1995
The RF Line
Designed for 960–1215 MHz long pulse common base amplifier applications
such as JTIDS and Mode S transmitters.
Guaranteed Performance @ 1.215 GHz, 36 Vdc
Output Power = 120 Watts Peak
Gain = 8.0 dB Min., 9.2 dB (Typ)
100% Tested for Load Mismatch at All Phase Angles with 3:1 VSWR
Hermetically Sealed Industry Standard Package
Silicon Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Internal Input and Output Matching for Broadband Operation
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
VCBO
VEBO
IC
PD
55
Vdc
Collector–Base Voltage
55
Vdc
Emitter–Base Voltage
3.5
Vdc
Collector Current — Peak (1)
15
Adc
Total Device Dissipation @ TC = 25
°
C (1), (2)
Derate above 25
°
C
380
2.17
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +200
°
C
Junction Temperature
200
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (3)
R
θ
JC
0.46
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0)
Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector Cutoff Current (VCB = 36 Vdc, IE = 0)
NOTES:
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
55
—
—
Vdc
55
—
—
Vdc
3.5
—
—
Vdc
—
—
25
mAdc
(continued)
Order this document
by MRF10120/D
SEMICONDUCTOR TECHNICAL DATA
120 W (PEAK), 960–1215 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
CASE 355C–02, STYLE 1
REV 7
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