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參數(shù)資料
| 型號(hào)： | MR2510G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 整流器 |
| 英文描述： | 25 A, 1000 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC, 2 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 125K |
| 代理商： | MR2510G |
MR2502, MR2504, MR2510
http://onsemi.com
372
MAXIMUM RATINGS
Characteristic
Symbol
MR2502
MR2504
MR2510
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
200
400
1000
Volts
NonRepetitive Peak Reverse Voltage
(Halfwave, single phase, 60 Hz peak)
VRSM
240
480
1200
Volts
Average Rectified Forward Current
(Single phase, resistive load, 60 Hz, TC = 150°C)
IO
25
Amps
NonRepetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave,
single phase, 60 Hz)
IFSM
400 (for 1 cycle)
Amps
Operating and Storage Junction Temperature Range
TJ, Tstg
*65 to +175
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
(Single Side Cooled)
R
θJC
1.0
°C/W
ELECTRICAL CHARACTERISTICS
Characteristics and Conditions
Symbol
Max
Unit
Maximum Instantaneous Forward Voltage
(iF = 78.5 Amps, TC = 25°C)
vF
1.18
Volts
Maximum Reverse Current (rated dc voltage)
TC = 25°C
TC = 100°C
IR
100
500
A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MR3025G | 25 A, 250 V, SILICON, RECTIFIER DIODE |
| MR850-G | 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD |
| MR851-G | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD |
| MR852-G | 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD |
| MR856-G | 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MR2510L | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:AUTOMOTIVE RECTIFIER DIODES |
| MR2512 | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:AUTOMOTIVE RECTIFIER DIODES |
| MR2512L | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:AUTOMOTIVE RECTIFIER DIODES |
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