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參數(shù)資料
| 型號： | MR18R162GEG0-CT9 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Key Timing Parameters |
| 中文描述： | 關(guān)鍵的定時參數(shù) |
| 文件頁數(shù)： | 6/16頁 |
| 文件大小： | 442K |
| 代理商： | MR18R162GEG0-CT9 |
Page 5
Version 1.0 May 2004
MR16R1624(8/G)EG0
MR18R1624(8/G)EG0
D
D
D
D
D
D
D
D
D
C
C
C
C
R
R
R
C
C
C
C
C
D
D
D
D
D
D
D
D
D
SIO0
SIO1
SCK
CMD
Vref
RDRAM Device(256/288Mb)
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
U1
S
L
L
V
R
S
R
R
Vdd
Gnd
2 per
RDRAM device
0.22/0.1
μ
F
SCL
WP
SDA
A0 A1
SCL
SWP
SA0
SA1
SA2
SDA
Serial Presence Detect
Note 1. Rambus
Channel signals form a loop through
the RIMM module, with the exception of the SIO chain.
Note 2. See Serial Presence Detection Specification for
information on the SPD device and its contents.
D
D
D
D
D
D
D
D
D
C
C
C
C
R
R
R
C
C
C
U2
C
C
D
D
D
D
D
D
D
D
D
SIO0
SIO1
SCK
CMD
Vref
RDRAM Device (256/288Mb)
D
D
D
D
D
D
D
D
D
C
C
C
C
R
R
R
C
C
C
U3
C
C
D
D
D
D
D
D
D
D
D
SIO0
SIO1
SCK
CMD
Vref
RDRAM Device (256/288Mb)
D
D
D
D
D
D
D
D
D
C
C
C
C
R
R
R
C
C
C
UN
C
C
D
D
D
D
D
D
D
D
D
SIO0
SIO1
SCK
CMD
Vref
RDRAM Device (256/288Mb)
V
REF
Gnd
1 per
2 RDRAM devices
Plus one
Near Connector
V
CMOS
Gnd
1 per
2 RDRAM devices
0.22/0.1
μ
F
A2
U0
Vcc
SV
DD
0.22/0.1
μ
F
a
SV
DD
Gnd
47K
Module
Capacity
N
512/576MB
16
256/288MB
8
128/144MB
4
0.22/0.1
μ
F
a
a .
for 128/144MB and 256/288MB
0.22 μ
F : the other products
Figure 2: RIMM Module Functional Diagram
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PDF描述 |
|---|---|
| MR18R1624EG0-CM8 | CONN HEADER 18POS DL PCB 30GOLD |
| MR18R1624EG0-CT9 | CONN HEADER 20POS DL PCB 30GOLD |
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| MR18R1628EG0-CK8 | Key Timing Parameters |
| MR18R1628EG0-CM8 | Key Timing Parameters |
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| MR18R326GAG0-CT9 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V |
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