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參數(shù)資料
| 型號： | MR16R1622DF0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Key Timing Parameters |
| 中文描述： | 關(guān)鍵的定時參數(shù) |
| 文件頁數(shù)： | 8/16頁 |
| 文件大?。?/td> | 442K |
| 代理商： | MR16R1622DF0 |
Page 7
Version 1.0 July 2002
MR16R1622(4/8/G)DF0
MR18R1622(4/8/G)DF0
RIMM Module Current Profile
Table 7: RIMM Module Current Profile
I
DD
RIMM Module Capacity
512/576MB
256/288MB
128/144MB
64/72MB
Unit
Number of 256/288Mb RDRAM
devices
16
8
4
2
RIMM Module power
conditions
a
Freq
Max
Max
Max
Max
I
DD1
One RDRAM device in Read
b
,
balance in NAP mode
-1066
710/760
c
678/728
662/712
654/704
mA
-800
590/620
558/588
542/572
534/564
I
DD2
One RDRAM device in Read
b
,
balance in Standby mode
-1066
2150/2200
1350/1400
950/1000
750/800
mA
-800
1730/1760
1090/1120
770/800
610/640
I
DD3
One RDRAM device in Read
b
,
balance in Active mode
-1066
2900/2950
1700/1750
1100/1150
800/850
mA
-800
2330/2360
1370/1400
890/920
650/680
I
DD4
One RDRAM device in Write,
balance in NAP mode
-1066
790/850
758/818
742/802
734/794
mA
-800
635/680
603/648
587/632
579/624
I
DD5
One RDRAM device in Write,
balance in Standby mode
-1066
2230/2290
1430/1490
1030/1090
830/890
mA
-800
1775/1820
1135/1180
815/860
655/700
I
DD6
One RDRAM device in Write,
balance in Active mode
-1066
2980/3040
1780/1840
1180/1240
880/940
mA
-800
2375/2420
1415/1460
935/980
695/740
a. Actual power will depend on memory controller and usage patterns. Power does not include Refresh
Current.
b. I/O current is a function of the % of 1
’
s, to add I/O power for 50% 1
’
s for a X16 need to add 257mA or 290mA for X18 ECC module for the following:
V
DD
= 2.5V, V
TERM
= 1.8V, V
REF
= 1.4V and V
DIL
= V
REF
- 0.5V.
c. Current values represent X16(Non-Ecc) / X18(Ecc)
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|---|---|
| MR16R16248EG0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Key Timing Parameters |
| MR16R1624AF0-CK8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V |
| MR16R1624AF0-CM8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V |
| MR16R1624EG0-CK8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Key Timing Parameters |
| MR16R1624EG0-CM8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Key Timing Parameters |
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