參數(shù)資料
型號(hào)： MR0S16AVYS35
廠商： 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述： 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
中文描述： 256K x 16位的3.3V異步磁阻隨機(jī)存取內(nèi)存
文件頁(yè)數(shù)： 3/22頁(yè)
文件大?。?/td> 154K
代理商： MR0S16AVYS35
Electrical Specifications
MR2A16A Data Sheet, Rev. 4
Freescale Semiconductor
3
Electrical Specifications
Absolute Maximum Ratings
This device contains circuitry to protect the inputs against damage caused by high static voltages or
electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage
greater than maximum rated voltages to these high-impedance (Hi-Z) circuits.
The device also contains protection against external magnetic fields. Precautions should be taken to
avoid application of any magnetic field more intense than the maximum field intensity specified in the
maximum ratings.
Table 2. Operating Modes
E
1
G
1
W
1
LB
1
UB
1
Mode
V
DD
Current
I
SB1
, I
SB2
I
DDA
I
DDA
I
DDA
I
DDA
I
DDA
I
DDA
I
DDA
I
DDA
DQL[7:0]
2
DQU[15:8]
2
H
L
L
L
L
L
L
L
L
X
H
X
L
L
L
X
X
X
X
H
X
H
H
H
L
L
L
X
X
H
L
H
L
L
H
L
X
X
H
H
L
L
H
L
L
Not selected
Output disabled
Output disabled
Lower byte read
Upper byte read
Word read
Lower byte write
Upper byte write
Word write
Hi-Z
Hi-Z
Hi-Z
D
Out
Hi-Z
D
Out
D
In
Hi-Z
D
In
Hi-Z
Hi-Z
Hi-Z
Hi-Z
D
Out
D
Out
Hi-Z
D
In
D
In
NOTES:
1
H = high, L = low, X = don’t care
Hi-Z = high impedance
2
相關(guān)PDF資料
PDF描述
MR1A08ACTS35C 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
MR1A08ACYS35 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
MR1A08AVTS35C 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
MR1A08AVYS35 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MR0S16AYS35 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
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