參數(shù)資料
型號: MPTE-18RL4
廠商: ON SEMICONDUCTOR
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
封裝: PLASTIC, CASE 41A-04, 2 PIN
文件頁數(shù): 2/8頁
文件大?。?/td> 60K
代理商: MPTE-18RL4
Uni–Directional TVS
IPP
IF
V
I
IR
IT
VRWM
VC VBR
VF
1N6373 – 1N6381 Series (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 3.5 V Max. @ IF (Note 3.) = 100 A)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
QVBR
Maximum Temperature Variation of VBR
IF
Forward Current
VF
Forward Voltage @ IF
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 3.) = 100 A)
VRWM
IR @
Breakdown Voltage
VC @ IPP (Note 6.)
VC (Volts) (Note 6.)
JEDEC
Device
VRWM
(Note 4.)
IR @
VRWM
VBR (Note 5.) (Volts)
@ IT
VC
IPP
@IPP =
QVBR
Device
(ON Device)
Device
Marking
(Volts)
(
mA)
Min
Nom
Max
(mA)
(Volts)
(A)
@ IPP =
1 A
@ IPP =
10 A
(mV/
°C)
1N6373
(MPTE–5)
1N6373
MPTE–5
5.0
300
6.0
1.0
9.4
160
7.1
7.5
4.0
1N6374
(MPTE–8)
1N6374
MPTE–8
8.0
25
9.4
1.0
15
100
11.3
11.5
8.0
1N6375
(MPTE–10)
1N6375
MPTE–10
10
2.0
11.7
1.0
16.7
90
13.7
14.1
12
1N6376
(MPTE–12)
1N6376
MPTE–12
12
2.0
14.1
1.0
21.2
70
16.1
16.5
14
1N6377
(MPTE–15)
1N6377
MPTE–15
15
2.0
17.6
1.0
25
60
20.1
20.6
18
1N6378*
(MPTE–18)
1N6378*
MPTE–18
18
2.0
21.2
1.0
30
50
24.2
25.2
21
1N6379
(MPTE–22)
1N6379
MPTE–22
22
2.0
25.9
1.0
37.5
40
29.8
32
26
1N6380
(MPTE–36)
1N6380
MPTE–36
36
2.0
42.4
1.0
65.2
23
50.6
54.3
50
1N6381
(MPTE–45)
1N6381
MPTE–45
45
2.0
52.9
1.0
78.9
19
63.3
70
60
ICTE–5
5.0
300
6.0
1.0
9.4
160
7.1
7.5
4.0
ICTE–10
10
2.0
11.7
1.0
16.7
90
13.7
14.1
8.0
ICTE–12
12
2.0
14.1
1.0
21.2
70
16.1
16.5
12
ICTE–15
15
2.0
17.6
1.0
25
60
20.1
20.6
14
ICTE–18
18
2.0
21.2
1.0
30
50
24.2
25.2
18
ICTE–22
22
2.0
25.9
1.0
37.5
40
29.8
32
21
ICTE–36
36
2.0
42.4
1.0
65.2
23
50.6
54.3
26
NOTES:
3. Square waveform, PW = 8.3 ms, Non–repetitive duty cycle.
4. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to
or greater than the dc or continuous peak operating voltage level.
5. VBR measured at pulse test current IT at an ambient temperature of 25°C and minimum voltage in VBR is to be controlled.
6. Surge current waveform per Figure 5 and derate per Figures 1 and 2.
*Not Available in the 1500/Tape & Reel
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