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參數(shù)資料
| 型號： | MPSA56J05Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 8/15頁 |
| 文件大小： | 1073K |
| 代理商： | MPSA56J05Z |
2
www.fairchildsemi.com
MPSA56/MMBTA56/PZTA56 Rev. 1.0.2
MPSA56/MMBT
A56/PZT
A56
PNP
General
Purpose
Amplier
Electrical Characteristics
TA = 25°C unless otherwise specied.
*Pulse Test: Pulse Width
≤ 300s, Duty Cycle ≤ 2.0%
Note:
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Spice Model
PNP
(Is=12.27p Xti=3 Eg=1.11 Vaf=100 Bf=91.63 Ne=1.531 Ise=12.27p Ikf=1.009 Xtb=1.5 Br=1.287 Nc=2 Isc=0 Ikr=0 Rc=.6
Cjc=48.28p Mjc=.5615 Vjc=.75 Fc=.5 Cje=106.7p Mje=.5168 Vje=.75 Tr=496.3n Tf=865.8p Itf=.2 Vtf=2 Xtf=.8 Rb=10)
Parameter
Symbol
Test Condition
Min.
Max.
Units
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage*
V(BR)CEO
IC = -1.0mA, IB = 0
-80
V
Collector-Base Breakdown Voltage
V(BR)CBO
IC = -100A, IE = 0
-80
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE = -100A, IC = 0
-4.0
V
Collector-Cutoff Current
ICEO
VCE = -60V, IB = 0
-0.1
A
Collector-Cutoff Current
ICBO
VCB = -80V, IE = 0
-0.1
A
ON CHARACTERISTICS
DC Current Gain
hFE
IC = -10mA, VCE = -1.0V
IC = -100mA, VCE = -1.0V
100
Collector-Emitter Saturation Voltage
VCE(sat)
IC = -100mA, IB = -10mA
-0.2
V
Base-Emitter On Voltage
VBE(on)
IC = -100mA, VCE = -1.0V
-1.2
V
SMALL SIGNAL CHARACTERISTICS
Current Gain – Bandwidth Product
fT
IC = -100mA, VCE = -1.0V,
f = 100MHz
50
MHz
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