參數(shù)資料
型號(hào)： MMBTA70LT3
廠(chǎng)商： ON SEMICONDUCTOR
元件分類(lèi)： 小信號(hào)晶體管
英文描述： 100 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝： PLASTIC, CASE 318-08, 3 PIN
文件頁(yè)數(shù)： 1/25頁(yè)
文件大?。?/td> 486K
代理商： MMBTA70LT3
2–412
Motorola Small–Signal Transistors, FETs and Diodes Device Data
General Purpose Transistor
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
–40
Vdc
Emitter–Base Voltage
VEBO
–4.0
Vdc
Collector Current — Continuous
IC
–100
mAdc
DEVICE MARKING
MMBTA70LT1 = M2C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board,(1)
TA = 25°C
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance, Junction to Ambient
R
θJA
556
°C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25
°C
PD
300
2.4
mW
mW/
°C
Thermal Resistance, Junction to Ambient
R
θJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
– 55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –1.0 mAdc, IB = 0)
V(BR)CEO
–40
—
Vdc
Emitter–Base Breakdown Voltage
(IE = –100 Adc, IC = 0)
V(BR)EBO
–4.0
—
Vdc
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
ICBO
—
–100
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = –5.0 mAdc, VCE = –10 Vdc)
hFE
40
400
—
Collector–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
VCE(sat)
—
–0.25
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = –5.0 mAdc, VCE = –10 Vdc, f = 100 MHz)
fT
125
—
MHz
Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
4.0
pF
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMBTA70LT1
1
2
3
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
COLLECTOR
3
1
BASE
2
EMITTER
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBTA92 功能描述:兩極晶體管 - BJT SOT-23 PNP HIGH VOLT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBTA92 T/R 功能描述:開(kāi)關(guān)晶體管 - 偏壓電阻器 TRANS SW TAPE-7 RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
MMBTA92,215 功能描述:兩極晶體管 - BJT TRANS SW TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBTA92 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR PNP SOT-23
MMBTA92 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTORS RF BIPOLAR TRANSISTOR TYPE:
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