參數(shù)資料
型號: MMBTH24LT1
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB
封裝: PLASTIC, CASE 318-08, 3 PIN
文件頁數(shù): 1/22頁
文件大?。?/td> 291K
代理商: MMBTH24LT1
2–424
Motorola Small–Signal Transistors, FETs and Diodes Device Data
VHF Mixer Transistor
NPN Silicon
Designed for
fT = 400 MHz Min @ 8 mA
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
30
Vdc
Collector–Base Voltage
VCBO
40
Vdc
Emitter–Base Voltage
VEBO
4.0
Vdc
Collector Current – Continuous
IC
50
mAdc
DEVICE MARKING
MMBTH24LT1 = M3A
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board (1)
TA = 25°C
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance Junction to Ambient
R
θJA
556
°C/W
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25
°C
PD
300
2.4
mW
mW/
°C
Thermal Resistance Junction to Ambient
R
θJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
– 55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
30
Vdc
Collector–Base Breakdown Voltage (IC = 100 Adc, IE = 0)
V(BR)CBO
40
Vdc
Emitter–Base Breakdown Voltage (IE = 10 Adc, IC = 0)
V(BR)EBO
4.0
Vdc
Collector Cutoff Current (VCB = 15 Vdc, IE = 0)
ICBO
50
nAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMBTH24LT1
CASE 318-08, STYLE 6
SOT-23 (TO-236AB)
1
2
3
Motorola Preferred Device
COLLECTOR
3
1
BASE
2
EMITTER
相關(guān)PDF資料
PDF描述
MMBTH24LT3 VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB
MMBTH69LT1 UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236AB
MMBTH69LT3 UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236AB
MMBTH81LT1 UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236AB
MMBTH81LT3 UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBTH34 功能描述:射頻雙極小信號晶體管 NPN RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
MMBTH34_Q 功能描述:兩極晶體管 - BJT NPN RF Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBTH81 功能描述:射頻雙極小信號晶體管 PNP RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
MMBTH81 制造商:Fairchild Semiconductor Corporation 功能描述:RF Bipolar Transistor
MMBTH81_D87Z 功能描述:射頻雙極小信號晶體管 PNP RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel