參數(shù)資料
型號(hào)： MPQ2907A
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 0.6 A, 60 V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, TO-116
封裝： PLASTIC, DIP-14
文件頁數(shù)： 12/36頁
文件大?。?/td> 374K
代理商： MPQ2907A
MPQ2906 MPQ2907 MPQ2907A
2–475
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain(1)
(IC = –100 mAdc, VCE = –10 Vdc)
MPQ2907A
(IC = –1.0 mAdc, VCE = –10 Vdc)
MPQ2907A
(IC = –10 mAdc, VCE = –10 Vdc)
MPQ2906
MPQ2907
(IC = –10 mAdc, VCE = –10 Vdc)
MPQ2907A
(IC = –150 mAdc, VCE = –10 Vdc)
MPQ2907A
(IC = –150 mAdc, VCE = –10 Vdc)
MPQ2906
MPQ2907
(IC = –300 mAdc, VCE = –10 Vdc)
MPQ2906
MPQ2907
(IC = –500 mAdc, VCE = –10 Vdc)
MPQ2907A
hFE
75
100
35
75
100
40
100
20
30
50
—
300
—
Collector – Emitter Saturation Voltage(1)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –300 mAdc, IB = –30 mAdc)
MPQ2906, MPQ2907
(IC = –500 mA, IB = –500 mA)
MPQ2907A
VCE(sat)
—
–0.4
–1.6
Vdc
Base – Emitter Saturation Voltage(1)
(IC = –150 mAdc, IB = –15 mAdc)
MPQ2906, MPQ2907
(IC = –300 mAdc, IB = –30 mAdc)
MPQ2906, MPQ2907
(IC = –500 mA, IB = –50 mA)
MPQ2907A
VBE(sat)
—
–1.3
–2.6
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz)
fT
200
—
MHz
Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
8.0
pF
Input Capacitance (VEB = 2.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
—
30
pF
SWITCHING CHARACTERISTICS
Turn–On Time
(VCC = –30 Vdc, IC = –150 mAdc, IB1 = 15 mAdc)
MPQ2907A Only
ton
—
45
ns
Turn–Off Time
(VCC = –6.0 Vdc, IC = –150 mAdc,
IB1 = IB2 = 15 mAdc)
MPQ2907A Only
toff
—
180
ns
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
Figure 1. Delay and Rise Time
Test Circuit
–30
200
1.0 k
0
–16 V
TO OSCILLOSCOPE
RISE TIME
≤ 5.0 ns
INPUT
Zo = 50 W
PRF = 150 PPS
RISE TIME
≤ 2.0 ns
Figure 2. Storage and Fall Time
Test Circuit
50
200 ns
–6.0
37
1.0 k
0
–30 V
TO OSCILLOSCOPE
RISE TIME
≤ 5.0 ns
INPUT
Zo = 50 W
PRF = 150 PPS
RISE TIME
≤ 2.0 ms
50
200 ns
1N916
+15 V
1.0 k
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