參數(shù)資料
型號: MPC8245TVV333D
廠商: Freescale Semiconductor
文件頁數(shù): 5/68頁
文件大?。?/td> 0K
描述: IC MPU 32BIT 333MHZ PPC 352-TBGA
標準包裝: 24
系列: MPC82xx
處理器類型: 32-位 MPC82xx PowerQUICC II
速度: 333MHz
電壓: 2V
安裝類型: 表面貼裝
封裝/外殼: 352-LBGA
供應(yīng)商設(shè)備封裝: 352-TBGA(35x35)
包裝: 托盤
MPC8245 Integrated Processor Hardware Specifications, Rev. 10
Freescale Semiconductor
13
Electrical and Thermal Characteristics
4.4
Thermal Characteristics
Table 6 provides the package thermal characteristics for the MPC8245. For details, see Section 7.8,
4.5
AC Electrical Characteristics
After fabrication, functional parts are sorted by maximum processor core frequency as shown in Table 7
and tested for conformance to the AC specifications for that frequency. The processor core frequency is
determined by the bus (PCI_SYNC_IN) clock frequency and the settings of the PLL_CFG[0:4] signals.
Parts are sold by maximum processor core frequency. See Section 9, “Ordering Information,” for details
on ordering parts.
Table 6. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Notes
Junction-to-ambient natural convection
(Single-layer board—1s)
RθJA
16.1
°C/W
1, 2
Junction-to-ambient natural convection
(Four-layer board—2s2p)
RθJMA
12.0
°C/W
1, 3
Junction-to-ambient (@200 ft/min)
(Single-layer board—1s)
RθJMA
11.6
°C/W
1, 3
Junction-to-ambient (@200 ft/min)
(Four layer board—2s2p)
RθJMA
9.0
°C/W
1, 3
Junction-to-board
RθJB
4.8
°C/W
4
Junction-to-case
RθJC
1.8
°C/W
5
Junction-to-package top (natural convection)
ΨJT
1.0
°C/W
6
Notes:
1. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board)
temperature, ambient temperature, airflow, power dissipation of other components on the board, and board thermal
resistance.
2. Per SEMI G38-87 and JEDEC JESD51-2 with the single-layer board horizontal.
3. Per JEDEC JESD51-6 with the board horizontal.
4. Thermal resistance between the die and the printed-circuit board per JEDEC JESD51-8. Board temperature is measured on
the top surface of the board near the package.
5. Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883 Method
1012.1) with the cold plate used for case temperature.
6. Thermal characterization parameter indicating the temperature difference between the package top and the junction
temperature per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is written
as Psi-JT.
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