參數(shù)資料
型號(hào)： MMK2-67025EV-30
廠商： TEMIC SEMICONDUCTORS
元件分類： Static RAM
英文描述： 8K X 16 DUAL-PORT SRAM, 30 ns, QFP84
封裝： MQFP-84
文件頁(yè)數(shù)： 7/23頁(yè)
文件大?。?/td> 355K
代理商： MMK2-67025EV-30
M67025E
Rev. G – July 6, 2000
15
AC Electrical Characteristics
over the Full Operating Temperature and Supply Voltage Range
WRITE CYCLE
M
67025–30
M
67025–45
Symbol
(4)
Symbol
(5)
PARAMETER
Min.
Max.
Min.
Max.
UNIT
TAVAVW
tWC
Write cycle time
30
–
45
–
ns
TELWH
tSW
Chip select to end of write (3)
25
–
40
–
ns
TAVWH
tAW
Address valid to end of write
25
–
40
–
ns
TAVWL
tAS
Address Set–up Time
0
–
0
–
ns
TWLWH
tWP
Write Pulse Width
25
–
35
–
ns
TWHAX
tWR
Write Recovery Time
0
–
0
–
ns
TDVWH
tDW
Data Valid to end of write
20
–
25
–
ns
TGHQZ
tHZ
Output high Z time (1, 2)
–
15
–
20
ns
TWHDX
tDH
Data hold time (4)
0
–
0
–
ns
TWLQZ
tWZ
Write enable to output in high Z (1, 2)
–
15
–
20
ns
TWHQX
tOW
Output active from end of write (1, 2, 4)
0
–
0
–
ns
TSWRD
tSWRD
SEM flag write to read time
10
–
10
–
ns
TSPS
tSPS
SEM flag contention window
10
–
10
–
ns
Notes :
1. Transition is measured
± 500 mV from low or high impedance voltage with load (figures 2 and 3).
2. This parameters is guaranteed but not tested.
3. To access RAM CS = VIL, UB or LB = VIL, SEM = VIH. To access semaphore CS = VIH, SEM = VIL. This condition must be valid
for entire tSW time.
4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH
and tOW values will vary over voltage and temperature, the actual tDH will always be smaller than the actual tOW.
5. STD symbol.
6. ALT symbol.
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