參數(shù)資料
型號(hào)： MMDT2222V
廠商： Diodes Inc.
英文描述： DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
中文描述： 雙npn型小信號(hào)晶體管表面貼裝
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 69K
代理商： MMDT2222V
DS30563 Rev. 2 - 0
2 of 4
MMDT2222V
www.diodes.com
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
75
40
6.0
V
V
V
nA
A
nA
nA
nA
I
C
= 10 A, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 10 A, I
C
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 60V, I
E
= 0, T
A
= 150 C
V
CE
= 60V, V
EB(OFF)
= 3.0V
V
EB
= 3.0V, I
C
= 0
V
CE
= 60V, V
EB(OFF)
= 3.0V
Collector Cutoff Current
I
CBO
10
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
I
CEX
I
EBO
I
BL
10
10
20
ON CHARACTERISTICS (Note 4)
DC Current Gain
h
FE
35
50
75
100
40
50
35
300
I
C
= 100 A, V
CE
= 10V
I
C
= 1.0mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V
I
C
= 150mA, V
CE
= 10V
I
C
= 500mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V, T
A
= -55 C
I
C
= 150mA, V
CE
= 1.0V
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
I
C
= 150mA, I
B
= 15mA
I
C
= 500mA, I
B
= 50mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
0.3
1.0
V
Base-Emitter Saturation Voltage
V
BE(SAT)
0.6
1.2
2.0
V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
C
obo
C
ibo
8
pF
pF
V
CB
= 10V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
V
= 20V, I
C
= 20mA,
f = 100MHz
V
CE
= 10V, I
C
= 100 A,
R
S
= 1.0k
f = 1.0kHz
—
25
Current Gain-Bandwidth Product
f
T
300
MHz
Noise Figure
NF
4.0
dB
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
t
d
t
r
t
s
t
f
10
25
225
60
ns
ns
ns
ns
V
CC
= 30V, I
= 150mA,
V
BE(off)
= - 0.5V, I
B1
= 15mA
V
CC
= 30V, I
= 150mA,
I
B1
= I
B2
= 15mA
A
Notes:
4. Short duration test pulse used to minimize self-heating effect.
相關(guān)PDF資料
PDF描述
MMDT2222V-7 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT2227-7-F COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMDT2222V_1 制造商:DIODES 制造商全稱(chēng):Diodes Incorporated 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT2222V-7 功能描述:兩極晶體管 - BJT NPN BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMDT2222V-7-F 制造商:Diodes Incorporated 功能描述:TRANS GP BJT NPN 40V 0.6A 6PIN SOT-563 - Tape and Reel
MMDT2222V-TP 功能描述:TRANSISTOR NPN DUAL 40V SOT563 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 陣列 系列:- 標(biāo)準(zhǔn)包裝:10,000 系列:- 晶體管類(lèi)型:2 NPN（雙） 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:45V Ib、Ic條件下的Vce飽和度（最大）:600mV @ 5mA，100mA 電流 - 集電極截止（最大）:- 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 頻率 - 轉(zhuǎn)換:250MHz 安裝類(lèi)型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應(yīng)商設(shè)備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱(chēng):SP000747402
MMDT2227 制造商:SECOS 制造商全稱(chēng):SeCoS Halbleitertechnologie GmbH 功能描述:Multi-Chip Transistor
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