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參數(shù)資料
| 型號： | MMDF2C03HDR2G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFET 2 Amps, 30 Volts Complementary SO-8, Dual |
| 中文描述： | 4.1 A, 30 V, 0.07 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, MINIATURE, CASE 751-07, SO-8 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 125K |
| 代理商： | MMDF2C03HDR2G |
MMDF2C03HD
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
continued
(T
A
= 25
°
C unless otherwise noted) (Note 6)
Characteristic
Symbol
Polarity
Min
Typ
Max
Unit
SOURCEDRAIN DIODE CHARACTERISTICS
(T
C
= 25
°
C)
Forward Voltage (Note 7)
(I
S
= 3.0 Adc, V
GS
= 0 Vdc)
(I
S
= 2.0 Adc, V
GS
= 0 Vdc)
V
SD
(N)
(P)
0.82
1.82
1.2
2.0
Vdc
Reverse Recovery Time
(I
F
= I
S
, dI
S
/dt = 100 A/ s)
t
rr
(N)
(P)
24
42
ns
t
a
(N)
(P)
17
16
t
b
(N)
(P)
7.0
26
Reverse Recovery Storage
Charge
Q
RR
(N)
(P)
0.025
0.043
C
6. Negative signs for PChannel device omitted for clarity.
7. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
TYPICAL ELECTRICAL CHARACTERISTICS
NChannel
PChannel
3.9 V
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
0
0.4
0.8
1.2
1.6
2
0
1
3
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
ID
4
2
T
J
= 25
°
C
2.7 V
2.5 V
0.2
0.6
1.8
1.4
1
5
6
2.9 V
3.1 V
3.3 V
3.5 V
3.7 V
4.5 V
4.3 V
3.9 V
4.1 V
V
GS
= 10 V
0
ID
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
V
DS
≥
10 V
25
°
C
2
4
6
5
1
2
2.5
3
3.5
4
3
0
0.2
0.4
0.6
0.8
2
0
2
3
4
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
ID
T
J
= 25
°
C
V
GS
= 10 V
1
1.2
2.7 V
2.5 V
1
1.4
1.6
1.8
1.5
1.7
1.9
2.1
2.3
3.7
0
2
3
4
ID
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
V
DS
≥
10 V
T
J
= 100
°
C
25
°
C
55
°
C
2.5
1
2.7
2.9
3.1
3.3
3.5
T
J
= 100
°
C
55
°
C
2.9 V
3.1 V
3.3 V
3.5 V
3.7 V
4.5 V
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|---|---|
| MMDF2C03HDR2G | 制造商:ON Semiconductor 功能描述:MOSFET |
| MMDF2N02E | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 2 Amps, 25 Volts N−Channel SO−8, Dual |
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| MMDF2N02ER2G | 功能描述:MOSFET NFET SO8D 25V 3.6A 100mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMDF2N05ZR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述: 制造商:ON Semiconductor 功能描述: |
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