參數(shù)資料
型號: MMBTA93LT3
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 500 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝: PLASTIC, CASE 318-08, 3 PIN
文件頁數(shù): 17/23頁
文件大?。?/td> 321K
代理商: MMBTA93LT3
MMBTA92LT1 MMBTA93LT1
2–419
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
150
–1.0
15
h
FE
,DC
CURRENT
GAIN
TJ = +125°C
+25
°C
–55
°C
VCE = –10 Vdc
20
30
50
70
100
–2.0
–3.0
–5.0
–7.0
–10
–20
–30
–50
–80
–100
C,
CAP
ACIT
ANCE
(pF
)
Figure 2. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
–0.1
100
50
20
1.0
Ccb
10
2.0
5.0
Cib
Figure 3. Current–Gain — Bandwidth Product
IC, COLLECTOR CURRENT (mA)
–50
–20
–10
–5.0
–2.0
100
60
40
30
20
0
TJ = 25°C
VCE = –20 Vdc
f
,CURRENT–GAIN
BANDWIDTH
PRODUCT
(MHz)
T
–1.0
IC, COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
V
,VOL
TAGE
(VOL
TS)
–1.0
0
VCE(sat) @ IC/IB = 10 mA
VBE @ VCE = –10 V
–0.8
–0.6
–0.4
–0.2
–0.2 –0.5 –1.0 –2.0 –5.0 –10 –20
–50 –100 –200 –500 –1000
80
–100
–50
–20
–10
–5.0
–2.0
–1.0
–100
相關(guān)PDF資料
PDF描述
MMBTH24LT1 VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB
MMBTH24LT3 VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB
MMBTH69LT1 UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236AB
MMBTH69LT3 UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236AB
MMBTH81LT1 UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBTA94 制造商:Diotec Semiconductor 功能描述:
MMBTD55T1 制造商:Motorola 功能描述:55 MOT T/R
MMBTF04GWBCA-QME00 制造商:Samsung Semiconductor 功能描述:MEMORY, SDCARD, CLASS 4, 4GB, Data Rate:4Mbps, Memory Size:4GB, Memory Type:SD C
MMBTF04GWBCA-XBMC 制造商:ELEMENT14 功能描述:SD CARD 4GB XBMC PRELOADED 制造商:ELEMENT14 功能描述:MEMORY, SDCARD, CLASS 4, 4GB 制造商:ELEMENT14 功能描述:PRE PROGRAMMED, SD CARD, 4GB, FOR RASPBERRY PI; Accessory Type:Memory Card - SD4GB; For Use With:Raspberry Pi; Features:XBMC Software ;RoHS Compliant: Yes
MMBTH10 功能描述:射頻雙極小信號晶體管 NPN RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel