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參數(shù)資料
| 型號： | MMBT2907AWT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | General Purpose Transistor PNP Silicon |
| 中文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 419-04, SC-70, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 76K |
| 代理商： | MMBT2907AWT1G |
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS(1)
Symbol
Min
Max
Unit
DC Current Gain (1)
(IC = –0.1 mAdc, VCE = –10 Vdc)
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –150 mAdc, VCE = –10 Vdc)
(IC = –500 mAdc, VCE = –10 Vdc)
Collector–Emitter Saturation Voltage(1)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
Base–Emitter Saturation Voltage(1)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
SMALL–SIGNAL CHARACTERISTICS
HFE
75
100
100
100
50
—
—
—
—
—
—
VCE(sat)
—
—
–0.4
–1.6
Vdc
VBE(sat)
—
—
–1.3
–2.6
Vdc
Current–Gain — Bandwidth Product
(IC = –50 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
200
—
MHz
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
8.0
pF
Input Capacitance
(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Cibo
—
30
pF
Turn–On Time
(VCC = –30 Vdc,
IC = –150 mAdc, IB1 = –15 mAdc)
IC = 150 mAdc, IB1 = 15 mAdc)
ton
td
tr
ts
tf
toff
—
45
Delay Time
—
10
Rise Time
—
40
ns
Storage Time
(VCC = –6.0 Vdc, IC = –150 mAdc,
IB1 = IB2 = 15 mAdc)
6 0 Vdc I
—
80
Fall Time
—
30
Turn–Off Time
—
100
1. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| MMBT2907AWT1G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR PNP -60V |
| MMBT2907FW | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:General Purpose Transistor |
| MMBT2907-G | 制造商:COMCHIP 制造商全稱:Comchip Technology 功能描述:GENERAL PURPOSE TRANSISTORS |
| MMBT2907L | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:PNP General Purpose Transistor |
| MMBT2907L WAF | 制造商:ON Semiconductor 功能描述: |
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