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參數(shù)資料
| 型號： | MMBT2907A |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 元件分類： | 功率晶體管 |
| 英文描述： | Surface mount Si-Epitaxial PlanarTransistors |
| 中文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 76K |
| 代理商： | MMBT2907A |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–323/SC–70 package
which is designed for low power surface mount applications.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
–60
Vdc
Collector–Base Voltage
–60
Vdc
Emitter–Base Voltage
–5.0
Vdc
Collector Current — Continuous
–600
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board(1)
TA = 25
°
C
PD
150
mW
Thermal Resistance Junction to Ambient
RJA
TJ, Tstg
833
°
C/W
Junction and Storage Temperature
–55 to +150
°
C
DEVICE MARKING
MMBT2907AWT1 = 2F
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(2)
(IC = –10 mAdc, IB = 0)
V(BR)CEO
–60
—
Vdc
Collector–Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
V(BR)CBO
–60
—
Vdc
Emitter–Base Breakdown Voltage
(IE = –10 Adc, IC = 0)
V(BR)EBO
–5.0
—
Vdc
Base Cutoff Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
IBL
—
–50
nAdc
Collector Cutoff Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
ICEX
—
–50
nAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
Thermal Clad is a registered trademark of the Berquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMBT2907AWT1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
1
2
3
CASE 419–02, STYLE 3
SOT–323/SC–70
COLLECTOR
3
1
BASE
2
EMITTER
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBT2907 | Surface mount Si-Epitaxial PlanarTransistors |
| MMBT2907AWT1 | General Purpose Transistor(PNP Silicon) |
| MMBT3416LT3 | General Purpose Amplifier |
| MMBT3416LT3 | General Purpose Amplifier(NPN Silicon) |
| MMBT5401LT1 | High Voltage Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT2907A MCC | 制造商:MCC 功能描述:General Purpose PNP SM TRANS SOT-23 制造商:MCC 功能描述:General Purpose PNP SM TRANS SOT-23 - free partial T/R at 500. |
| MMBT2907A | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR PNP SOT-23 |
| MMBT2907A_08 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMBT2907A_09 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP GENERAL PURPOSE AMPLIFIER |
| MMBT2907A_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
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