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參數(shù)資料
| 型號： | MMBT2222LT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | General Purpose Transistors |
| 中文描述： | 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 253K |
| 代理商： | MMBT2222LT1G |
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| MMBT2222LT1G | 制造商:ON Semiconductor 功能描述:TRANSISTOR BJT NPN 30V 0.6A SOT-23 制造商:ON Semiconductor 功能描述:TRANSISTOR, BJT, NPN, 30V, 0.6A, SOT-23 制造商:ON Semiconductor 功能描述:TRANSISTOR, BJT, NPN, 30V, 0.6A, SOT-23, Transistor Polarity:NPN, Collector Emit 制造商:ON Semiconductor 功能描述:TRANSISTOR, BJT, NPN, 30V, 0.6A, SOT-23, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:30V, Transition Frequency ft:250MHz, Power Dissipation Pd:225mW, DC Collector Current:600mA, DC Current Gain hFE:250, Operating , RoHS Compliant: Yes |
| MMBT2222LT1G_09 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistors |
| MMBT2222LT1G-CUT TAPE | 制造商:ON 功能描述:MMBT Series 30 V 600 mA SMT NPN Silicon General Purpose Transistor - SOT-23 |
| MMBT2222LT3 | 功能描述:兩極晶體管 - BJT 600mA 75V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2222LT3G | 功能描述:兩極晶體管 - BJT 600mA 75V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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