參數(shù)資料
型號： MMBT2222AWT1
廠商： MOTOROLA INC
元件分類： 小信號晶體管
英文描述： General Purpose Transistor
中文描述： 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
文件頁數(shù)： 1/8頁
文件大?。?/td> 253K
代理商： MMBT2222AWT1
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
2222
2222A
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
30
40
Vdc
Collector–Base Voltage
60
75
Vdc
Emitter–Base Voltage
5.0
6.0
Vdc
Collector Current — Continuous
600
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board(1)
TA = 25
°
C
Derate above 25
°
C
PD
225
1.8
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
RJA
PD
556
°
C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25
°
C
Derate above 25
°
C
300
2.4
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
RJA
TJ, Tstg
417
°
C/W
Junction and Storage Temperature
DEVICE MARKING
–55 to +150
°
C
MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
MMBT2222
MMBT2222A
V(BR)CEO
30
40
—
—
Vdc
Collector–Base Breakdown Voltage (IC = 10 Adc, IE = 0)
MMBT2222
MMBT2222A
V(BR)CBO
60
75
—
—
Vdc
Emitter–Base Breakdown Voltage (IE = 10 Adc, IC = 0)
MMBT2222
MMBT2222A
V(BR)EBO
5.0
6.0
—
—
Vdc
Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
Collector Cutoff Current (VCB = 50 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0, TA = 125
°
C)
(VCB = 60 Vdc, IE = 0, TA = 125
°
C)
Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0)
Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
1. FR–5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
MMBT2222A
ICEX
ICBO
—
10
nAdc
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
—
—
—
—
0.01
0.01
10
10
μ
Adc
MMBT2222A
IEBO
IBL
—
100
nAdc
MMBT2222A
—
20
nAdc
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMBT2222LT1/D
SEMICONDUCTOR TECHNICAL DATA
1
2
3
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
*Motorola Preferred Device
COLLECTOR
3
1
BASE
2
EMITTER
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBT2222AWT1_10 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistor
MMBT2222AWT1G 功能描述:兩極晶體管 - BJT 600mA 75V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT2222AWT1GOSDKR-ND 制造商: 功能描述: 制造商:undefined 功能描述:
MMBT2222AWT1H 制造商:ON Semiconductor 功能描述:
MMBT2222AWT3G 功能描述:兩極晶體管 - BJT SS SC70 GP XSTR NPN 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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