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參數(shù)資料
| 型號(hào)： | MK50X256CMC100 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 32-BIT, FLASH, 100 MHz, RISC MICROCONTROLLER, PBGA121 |
| 封裝： | 8 X 8 MM, MAPBGA-121 |
| 文件頁(yè)數(shù)： | 25/69頁(yè) |
| 文件大?。?/td> | 1770K |
| 代理商： | MK50X256CMC100 |
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6.4.1.2 Flash timing specifications — commands
Table 19. Flash command timing specifications
Symbol
Description
Min.
Typ.
Max.
Unit
Notes
trd1blk256k
Read 1s Block execution time
256 KB data flash
—
1.4
ms
trd1sec2k
Read 1s Section execution time (flash sector)
—
40
μs
tpgmchk
Program Check execution time
—
35
μs
trdrsrc
Read Resource execution time
—
35
μs
tpgm4
Program Longword execution time
—
50
TBD
μs
tersblk256k
Erase Flash Block execution time
256 KB data flash
—
160
800
ms
tersscr
Erase Flash Sector execution time
—
20
100
ms
tpgmsec512
tpgmsec1k
tpgmsec2k
Program Section execution time
512 B flash
1 KB flash
2 KB flash
—
TBD
ms
trd1all
Read 1s All Blocks execution time
—
2.8
ms
trdonce
Read Once execution time
—
35
μs
tpgmonce
Program Once execution time
—
50
TBD
μs
tersall
Erase All Blocks execution time
—
320
1600
ms
tvfykey
Verify Backdoor Access Key execution time
—
35
μs
1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
6.4.1.3 Flash (FTFL) current and power specfications
Table 20. Flash (FTFL) current and power specfications
Symbol
Description
Typ.
Unit
IDD_PGM
Worst case programming current in program flash
10
mA
6.4.1.4 Reliability specifications
Table 21. NVM reliability specifications
Symbol
Description
Min.
Typ.1
Max.
Unit
Notes
Program Flash
tnvmretp10k Data retention after up to 10 K cycles
5
TBD
—
years
tnvmretp1k Data retention after up to 1 K cycles
10
TBD
—
years
Table continues on the next page...
Peripheral operating requirements and behaviors
K50 Sub-Family Data Sheet Data Sheet, Rev. 4, 3/2011.
Freescale Semiconductor, Inc.
Preliminary
31
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