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參數(shù)資料
| 型號： | MJF32C |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 28 WATTS |
| 中文描述： | 3 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, CASE 221D-03, TO-220, FULL PACK-3 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 90K |
| 代理商： | MJF32C |
MJF31C* (NPN), MJF32C* (PNP)
http://onsemi.com
4
t, TIME (ms)
1.0
0.7
0.01
0.01
0.1
0.07
r
1.0
1.0
100
Z
θ
JC(t) = r(t) R
θ
JC
R
θ
JC(t) = 3.125
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) Z
θ
JC(t)
P(pk)
t1
t2
SINGLE PULSE
1.0 k
D = 0.5
0.05
DUTY CYCLE, D = t1/t2
Figure 4. Thermal Response
0.1
0.05
0.03
0.02
0.5
0.3
0.2
0.02
0.05
0.2
0.5
2.0
5.0
200
500
10
20
50
0.2
0.02
0.01
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
20
5.0
50
100
Figure 5. Active Region Safe Operating Area
0.2
0.1
0.5
SECONDARY BREAKDOWN
LIMITED @ TJ
≤
150
°
C
THERMAL LIMIT @ TC = 25
°
C
(SINGLE PULSE)
BONDING WIRE LIMIT
1.0ms
100
μ
s
2.0
1.0
10
5.0
I
5.0ms
CURVES APPLY
BELOW RATED VCEO
MJF31C,
MJF32C
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150 C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150 C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.05
0.1
0.2
0.7
0.03
0.3
0.5
0.07
IC, COLLECTOR CURRENT (AMP)
Figure 6. Turn–Off Time
3.0
2.0
t
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
1.0
2.0
3.0
0.2
0.5
1.0
5.0
0.1
2.0 3.0
0.3
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
300
C
200
100
70
50
30
10
20
40
30
tf @ VCC = 30 V
tf @ VCC = 10 V
ts
′
IB1 = IB2
IC/IB = 10
ts
′
= ts - 1/8 tf
TJ = 25
°
C
TJ = +25
°
C
Ceb
Ccb
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