參數(shù)資料
型號(hào): MJE18009DW
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 10 A, 450 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, TO-220AB, 3 PIN
文件頁(yè)數(shù): 12/66頁(yè)
文件大?。?/td> 512K
代理商: MJE18009DW
MJE18009 MJF18009
3–751
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mA, L = 25 mH)
VCEO(sus)
450
Vdc
Collector Cutoff Current
(VCE = Rated VCEO, IB = 0)
ICEO
100
Adc
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
Collector Cutoff Current (VCE = 800 V, VEB = 0)
@ TC = 25°C
@ TC = 125°C
ICES
100
500
100
Adc
Emitter–Cutoff Current
(VEB = 9 Vdc, IC = 0)
IEBO
100
Adc
ON CHARACTERISTICS
Base–Emitter Saturation Voltage
(IC = 3 Adc, IB = 0.3 Adc)
(IC = 5 Adc, IB = 1 Adc)
(IC = 7 Adc, IB = 1.4 Adc)
VBE(sat)
0.8
0.9
1.1
1.15
1.25
Vdc
Collector–Emitter Saturation Voltage
(IC = 3 Adc, IB = 0.3 Adc)
@ TC = 25°C
@ TC = 125°C
VCE(sat)
0.3
0.6
0.65
Vdc
(IC = 5 Adc, IB = 1 Adc)
@ TC = 25°C
@ TC = 125°C
0.3
0.6
0.65
(IC = 7 Adc, IB = 1.4 Adc)
@ TC = 25°C
@ TC = 125°C
0.35
0.4
0.7
0.9
DC Current Gain
(IC = 1.5 Adc, VCE = 5 Vdc)
@ TC = 25°C
@ TC = 125°C
hFE
14
29
34
(IC = 5 Adc, VCE = 1 Vdc)
@ TC = 25°C
@ TC = 125°C
10
8
13
11.5
(IC = 7 Adc, VCE = 1 Vdc)
@ TC = 25°C
@ TC = 125°C
7
5
10
7.5
(IC = 10 mAdc, VCE = 5 Vdc)
@ TC = 25°C
10
25
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
fT
12
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
Cob
150
200
pF
Input Capacitance
(VEB = 8 Vdc)
Cib
2750
3500
pF
DYNAMIC SATURATION VOLTAGE
Dynamic Saturation
IC = 3 Adc
IB1 = 300 mAdc
@ 1
s
@ TC = 25°C
@ TC = 125°C
VCE(dsat)
8
13.5
V
Dynamic Saturation
Voltage:
Determined 1
s and
IB1 = 300 mAdc
VCC = 300 V
@ 3
s
@ TC = 25°C
@ TC = 125°C
4
8
3
s respectively after
rising IB1 reaches
90% of final IB1
IC = 7 Adc
IB1 =1 4Adc
@ 1
s
@ TC = 25°C
@ TC = 125°C
15
21
90% of final IB1
IB1 = 1.4 Adc
VCC = 300 V
@ 3
s
@ TC = 25°C
@ TC = 125°C
2
2.7
相關(guān)PDF資料
PDF描述
MJE18009BU 10 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18204BG 5 A, 600 V, NPN, Si, POWER TRANSISTOR
MJE18204BS 5 A, 600 V, NPN, Si, POWER TRANSISTOR
MJE18204AF 5 A, 600 V, NPN, Si, POWER TRANSISTOR
MJE18204BU 5 A, 600 V, NPN, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE180G 功能描述:兩極晶體管 - BJT 3A 40V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE180PWD 功能描述:TRANSISTOR NPN 40V 3A RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發(fā)射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
MJE180STU 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE181 功能描述:兩極晶體管 - BJT 3A 60V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE181G 功能描述:兩極晶體管 - BJT 3A 60V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2