參數(shù)資料
型號： MJE18002BG
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 2 A, 450 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁數(shù)： 34/65頁
文件大?。?/td> 409K
代理商： MJE18002BG
MJE18002 MJF18002
3–707
Motorola Bipolar Power Transistor Device Data
hFE, FORCED GAIN
t si
,ST
ORAGE
TIME
(ns)
IC, COLLECTOR CURRENT (AMPS)
0
500
1000
1500
2000
2500
57
9
11
13
15
0
500
1000
1500
2000
2500
3000
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
500
1000
1500
2000
2500
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
500
1000
1500
2000
2500
3000
3500
4000
4500
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
50
100
150
200
250
300
350
400
450
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
100
200
300
400
500
600
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
t,TIME
(ns)
t,TIME
(ns)
t,TIME
(ns)
t,TIME
(ns)
t,TIME
(ns)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IC, COLLECTOR CURRENT (AMPS)
Figure 7. Resistive Switching, ton
IC/IB = 5
IC/IB = 10
TJ = 125°C
TJ = 25°C
IB(off) = IC/2
VCC = 300 V
PW = 20
s
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IC, COLLECTOR CURRENT (AMPS)
Figure 8. Resistive Switching, toff
IB(off) = IC/2
VCC = 300 V
PW = 20
s
TJ = 25°C
TJ = 125°C
IC/IB = 10
IC/IB = 5
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Figure 9. Inductive Storage Time, tsi
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 H
TJ = 25°C
TJ = 125°C
IC/IB = 5
IC/IB = 10
57
9
11
13
15
Figure 10. Inductive Storage Time
TJ = 25°C
TJ = 125°C
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 H
IC = 1 A
IC = 0.4 A
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 H
TJ = 25°C
TJ = 125°C
tc
tfi
tc
tfi
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Inductive Switching, tc & tfi, IC/IB = 5
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IC, COLLECTOR CURRENT (AMPS)
Figure 12. Inductive Switching, tc & tfi, IC/IB = 10
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 H
TJ = 25°C
TJ = 125°C
tc
tfi
tc
tfi
相關(guān)PDF資料
PDF描述
MJE18002AF 2 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18002AK 2 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18002BC 2 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18004BD 5 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18004BA 5 A, 450 V, NPN, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE18002D2 制造商:Rochester Electronics LLC 功能描述:- Bulk
MJE18002G 功能描述:兩極晶體管 - BJT 2A 450V 40W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE18004 功能描述:兩極晶體管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE18004D2 功能描述:兩極晶體管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE18004D2G 功能描述:兩極晶體管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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