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參數(shù)資料
| 型號： | MJE18002AF |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 64/65頁 |
| 文件大?。?/td> | 409K |
| 代理商： | MJE18002AF |
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MJE18002 MJF18002
3–711
Motorola Bipolar Power Transistor Device Data
MOUNTED
FULLY ISOLATED
PACKAGE
LEADS
HEATSINK
0.110
″ MIN
Figure 22a. Screw or Clip Mounting Position
for Isolation Test Number 1
* Measurement made between leads and heatsink with all leads shorted together
CLIP
MOUNTED
FULLY ISOLATED
PACKAGE
LEADS
HEATSINK
CLIP
0.107
″ MIN
MOUNTED
FULLY ISOLATED
PACKAGE
LEADS
HEATSINK
0.107
″ MIN
Figure 22b. Clip Mounting Position
for Isolation Test Number 2
Figure 22c. Screw Mounting Position
for Isolation Test Number 3
TEST CONDITIONS FOR ISOLATION TESTS*
4–40 SCREW
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
NUT
CLIP
HEATSINK
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw
torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a con-
stant pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in . lbs will
cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.
Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the pack-
age. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10
in . lbs of mounting torque under any mounting conditions.
Figure 23a. Screw–Mounted
Figure 23b. Clip–Mounted
MOUNTING INFORMATION**
Figure 23. Typical Mounting Techniques
for Isolated Package
** For more information about mounting power semiconductors see Application Note AN1040.
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PDF描述 |
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| MJE18002AK | 2 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18002BC | 2 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18004BD | 5 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18004BA | 5 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18004AS | 5 A, 450 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE18002D2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MJE18002G | 功能描述:兩極晶體管 - BJT 2A 450V 40W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE18004 | 功能描述:兩極晶體管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE18004D2 | 功能描述:兩極晶體管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE18004D2G | 功能描述:兩極晶體管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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