參數(shù)資料
型號： MJE16204BV
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 6 A, 250 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁數(shù)： 1/64頁
文件大?。?/td> 437K
代理商： MJE16204BV
3–814
Motorola Bipolar Power Transistor Device Data
Designer's Data Sheet
SCANSWITCH
NPN Bipolar Power Deflection Transistor
For High and Very High Resolution Monitors
The MJE16204 is a state–of–the–art SWITCHMODE
bipolar power transistor. It is
specifically designed for use in horizontal deflection circuits for 20 mm diameter neck,
high and very resolution, full page, monochrome monitors.
550 Volt Collector–Base Breakdown Capability
Typical Dynamic Desaturation Specified (New Turn–Off Characteristic)
Application Specific State–of–the–Art Die Design
Isolated or Non–Isolated TO–220 Type Packages
Fast Switching:
65 ns Inductive Fall Time (Typ)
680 ns Inductive Storage Time (Typ)
Low Saturation Voltage:
0.4 Volts at 3.0 Amps Collector Current and 400 mA Base Drive
Low Collector–Emitter Leakage Current — 100 A Max at 550 Volts — VCES
High Emitter–Base Breakdown Capability For High Voltage Off Drive Circuits —
9.0 Volts (Min)
Case 221D is UL Recognized at 3500 VRMS: File #E69369
MAXIMUM RATINGS
Rating
Symbol
MJE16204
Unit
Collector–Emitter Breakdown Voltage
VCES
550
Vdc
Collector–Emitter Sustaining Voltage
VCEO(sus)
250
Vdc
Emitter–Base Voltage
VEBO
8.0
Vdc
RMS Isolation Voltage(2)
Per Fig. 14
(for 1 sec, TA = 25_C,
Per Fig. 15
Rel. Humidity < 30%)
Per Fig. 16
VISOL
—
V
Collector Current — Continuous
— Pulsed (1)
IC
ICM
6.0
8.0
Adc
Base Current — Continuous
— Pulsed (1)
IB
IBM
2.0
4.0
Adc
Repetitive Emitter–Base Avalanche Energy
W(BER)
0.2
mJ
Total Power Dissipation @ TC = 25_C
Total Power Dissipation @ TC = 100_C
Derated above TC = 25_C
PD
80
32
0.64
Watts
W/
_C
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
_C
THERMAL CHARCTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance — Junction to Case
R
θJC
1.56
_C/W
Lead Temperature for Soldering Purposes
1/8
″ from the case for 5 seconds
TL
260
_C
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
v 10%.
(2) Proper strike and creepage distance must be provided.
* Measurement made with thermocouple contacting the bottom insulated mounting surface of the
package (in a location beneath the die), the device mounted on a heatsink thermal grease applied,
and a mounting torque of 6 to 8 in
Slbs.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJE16204
POWER TRANSISTORS
6.0 AMPERES
550 VOLTS — VCES
45 AND 80 WATTS
CASE 221A–06
TO–220AB
MJE16204
(REPLACES MJF16204)
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