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參數(shù)資料
| 型號(hào)： | MJD31C |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Power Transistors(補(bǔ)償型功率晶體管) |
| 中文描述： | 3 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 369C, DPAK-3 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 81K |
| 代理商： | MJD31C |
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
http://onsemi.com
4
V
5
I
B
, BASE CURRENT (mA)
10
20
1.2
0.4
0
50
100
200
500
2
0.8
T
J
= 25
°
C
1.6
2
1
I
C
= 0.3 A
1000
Figure 7. Collector Saturation Region
300
V
R
, REVERSE VOLTAGE (VOLTS)
C
C
eb
0.1
200
100
0.5
1
10
40
T
J
= +25
°
C
t, TIME (ms)
1
0.01
1 k
0.3
0.2
0.07
0.05
r
R
JC(t)
= r(t) R
JC
R
JC
= 8.33
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
T
C
= P
(pk)
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
SINGLE PULSE
0.01
Figure 8. Capacitance
0.7
0.5
D = 0.5
Figure 9. Thermal Response
1 A
3 A
70
50
30
0.2 0.3
2
3
5
20 30
C
cb
0.1
0.03
0.02
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1
2
3
5
10
20
30
50
100
200 300
500
0.2
0.1
0.05
0.01
I
10
1.5
V
CE
, COLLECTOREMITTER VOLTAGE (VOLTS)
0.01
3
150
1
0.3
0.2
3
2
0.05
0.03
0.02
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW RATED V
CEO
5
7
20
70
10
T
C
= 25
°
C SINGLE PULSE
T
J
= 150
°
C
100 s
1ms
dc
2
0.1
0.5
5
Figure 10. Active Region Safe Operating Area
50
30
100
500 s
MJD31, MJD32
MJD31C, MJD32C
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 10 is based on T
J(pk)
= 150 C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
150 C. T
J(pk)
may be calculated from the data in
Figure 9. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD31C1 | 功能描述:兩極晶體管 - BJT 3A 100V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD31C-1 | 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, NPN Type, TO-252VAR |
| MJD31C-13 | 功能描述:兩極晶體管 - BJT 100V 5A NPN SMT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD31C1G | 功能描述:兩極晶體管 - BJT 3A 100V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD31C1G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR NPN 100V IPAK-4 |
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