參數(shù)資料
型號(hào): MJ21196
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: COMPLEMENTARY SILICON POWER TRANSISTORS
中文描述: 16 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-204AA
封裝: CASE 1-07, TO-3, 2 PIN
文件頁(yè)數(shù): 4/6頁(yè)
文件大小: 149K
代理商: MJ21196
4
Motorola Bipolar Power Transistor Device Data
Figure 9. Typical Saturation Voltages
IC, COLLECTOR CURRENT (AMPS)
S
Figure 10. Typical Saturation Voltages
IC, COLLECTOR CURRENT (AMPS)
S
Figure 11. Typical Base–Emitter Voltage
IC, COLLECTOR CURRENT (AMPS)
VB
Figure 12. Typical Base–Emitter Voltage
IC, COLLECTOR CURRENT (AMPS)
VB
Figure 13. Active Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
IC
There are two limitations on the power handling ability of a
transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 13 is based on TJ(pk) = 200
°
C; TC is
variable depending on conditions. At high case tempera-
tures, thermal limitations will reduce the power than can be
handled to values less than the limitations imposed by
second breakdown.
PNP MJ21195
NPN MJ21196
TYPICAL CHARACTERISTICS
PNP MJ21195
NPN MJ21196
3.0
2.5
2.0
1.5
1.0
0.5
0
100
10
1.0
0.1
1.6
1.2
1.0
0.8
0.6
0.4
0
100
10
1.0
0.1
0.2
10
1.0
0.1
100
10
1.0
0.1
10
1.0
0.1
100
10
1.0
0.1
100
10
1.0
0.1
100
10
1.0
1000
TJ = 25
°
C
VCE = 20 V (SOLID)
VCE = 5 V (DASHED)
TJ = 25
°
C
IC/IB = 10
VBE(sat)
VCE(sat)
1.4
TJ = 25
°
C
IC/IB = 10
VBE(sat)
VCE(sat)
TJ = 25
°
C
VCE = 20 V (SOLID)
VCE = 5 V (DASHED)
TJ = 25
°
C
10 ms
50 ms
250 ms
1 sec
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