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參數(shù)資料
| 型號： | MJ10007 |
| 廠商： | Boca Semiconductor Corp. |
| 英文描述： | SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTOR WITH BASE-EMITTER SPEEDUP DIODE |
| 中文描述： | 開關(guān)模式電源系列NPN硅達(dá)林頓晶體管基射極加速比二極管 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 228K |
| 代理商： | MJ10007 |
6
Motorola Bipolar Power Transistor Device Data
The Safe Operating Area figures shown in Figures 11 and 12 are
specified ratings for these devices under the test conditions
shown.
20
4.0
Figure 11. Forward Bias Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
2.0
1.0
0.5
0.1
6.0
10
20
40
400
60
0.02
I
TC = 25
°
C
BONDING WIRE LIMITED
THERMALLY LIMITED
SECOND BREAKDOWN LIMITED
dc
0.2
100
200
350
100
μ
s
10
μ
s
10
0
Figure 12. Reverse Bias Switching
Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
8
6
0
500
2
I
4
300
400
100
200
VBE(off) = 5 V
VBE(off) = 2 V
TURN OFF LOAD LINE
BOUNDARY FOR MJ10007
THE LOCUS FOR MJ10006
IS 50 V LESS
1.0 ms
5.0
ms
MJ10007
VBE(off) = 0 V
TJ
100
°
C
0.05
5.0
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 11 is based on TC = 25 C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC
≥
25 C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 11 may be found at any case tem-
perature by using the appropriate curve on Figure 13.
TJ(pk) may be calculated from the data in Figure 10. At
high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as VCEX(sus) at a given collector current
and represents a voltage–current condition that can be sus-
tained during reverse biased turn–off. This rating is verified
under clamped conditions so that the device is never sub-
jected to an avalanche mode. Figure 12 gives the complete
reverse bias safe operating area characteristics.
100
80
60
20
0
0
40
80
120
200
Figure 13. Power Derating
TC, CASE TEMPERATURE (
°
C)
P
THERMAL DERATING
SECOND BREAKDOWN
DERATING
160
40
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJ10007 | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| MJ10007 | NPN SILICON POWER DARLINGTON TRANSISTORS |
| MJ10007 | POWER TRANSISTORS(10A,350-400V,150W) |
| MJ10009 | 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS |
| MJ10009 | SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJ10007 | 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR NPN 400V TO-3 |
| MJ10008 | 制造商:Solid State Devices Inc (SSDI) 功能描述:TO 3 10 Amp Darlington Transistor |
| MJ10009 | 制造商:ON Semiconductor 功能描述:Trans Darlington NPN 500V 20A 3-Pin(2+Tab) TO-3 制造商:NTE Electronics 功能描述:NPN TRANSISTOR 制造商:NTE Electronics 功能描述:SILICON NPN TRANSISTOR, 500V, 20A, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:500V; Power Dissipation Pd:175W; DC Collector Current:20A; DC Current Gain hFE:40; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes |
| MJ10009 | 制造商:NTE Electronics 功能描述:T-NPN SI- PO DARL SW |
| MJ1000F | 制造商:Ohmite Mfg Co 功能描述: |
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