參數(shù)資料
型號(hào): MJ10007
廠商: Boca Semiconductor Corp.
英文描述: SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTOR WITH BASE-EMITTER SPEEDUP DIODE
中文描述: 開(kāi)關(guān)模式電源系列NPN硅達(dá)林頓晶體管基射極加速比二極管
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 228K
代理商: MJ10007
2
Motorola Bipolar Power Transistor Device Data
OFF CHARACTERISTICS
(IC = 1 A, Vclamp = Rated VCEX, TC = 100 C)
450
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150 C)
ICEV
mAdc
(VCE = Rated VCEV, RBE = 50
, TC = 100 C)
5.0
Emitter Cutoff Current
IEBO
175
mAdc
(IC = 2.5 Adc, VCE = 5.0 Vdc)
Collector Emitter Saturation Voltage
(IC = 10 Adc, IB = 1.0 Adc)
(IC = 5.0 Adc, IB = 250 mAdc, TC = 100 C)
VCE(sat)
40
30
500
300
Vdc
Base–Emitter Saturation Voltage
VBE(sat)
2.0
Vdc
(IF = 5.0 Adc)
DYNAMIC CHARACTERISTICS
Small Signal Current Gain
hfe
10
(VCC = 250 Vdc, IC = 5.0 A,
IB1 = 250 mA, VBE(off) = 5.0 Vdc, tp = 50
s,
(1) The internal Collector–to–Emitter diode can eliminate the need for an external diode to clamp inductive loads.
(1)
Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.
(2) Pulse Test: PW = 300
μ
s, Duty Cycle
2%.
相關(guān)PDF資料
PDF描述
MJ10007 RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
MJ10007 NPN SILICON POWER DARLINGTON TRANSISTORS
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJ10007 制造商:Solid State Devices Inc (SSDI) 功能描述:DARLINGTON TRANSISTOR NPN 400V TO-3
MJ10008 制造商:Solid State Devices Inc (SSDI) 功能描述:TO 3 10 Amp Darlington Transistor
MJ10009 制造商:ON Semiconductor 功能描述:Trans Darlington NPN 500V 20A 3-Pin(2+Tab) TO-3 制造商:NTE Electronics 功能描述:NPN TRANSISTOR 制造商:NTE Electronics 功能描述:SILICON NPN TRANSISTOR, 500V, 20A, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:500V; Power Dissipation Pd:175W; DC Collector Current:20A; DC Current Gain hFE:40; Operating Temperature Min:-65C; No. of Pins:2 ;RoHS Compliant: Yes
MJ10009 制造商:NTE Electronics 功能描述:T-NPN SI- PO DARL SW
MJ1000F 制造商:Ohmite Mfg Co 功能描述: