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| 型號： | MIC2590B-5BTQ TR |
| 廠商： | Micrel Inc |
| 文件頁數(shù)： | 20/23頁 |
| 文件大?。?/td> | 230K |
| 描述： | IC PCI HOT PLUG CTLR DUAL 48TQFP |
| 標(biāo)準(zhǔn)包裝： | 2,000 |
| 類型： | 熱交換控制器 |
| 應(yīng)用： | PCI，PCI-X |
| 內(nèi)部開關(guān)： | 無 |
| 電源電壓： | 3.3V，5V，±12V |
| 工作溫度： | 0°C ~ 70°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 48-TQFP |
| 供應(yīng)商設(shè)備封裝： | 48-TQFP（7x7） |
| 包裝： | 帶卷 (TR) |
| 其它名稱： | MIC2590B-5BTQTR MIC2590B-5BTQTR-ND |
Micrel, Inc.
MIC2590B
September 2008
20
M9999-091808
the MOSFET drain.
2. Since the rating for the part is given as for
10seconds, derate the maximum junction
temperature by 35癈. This is the standard good
practice derating of 25癈, plus another 10癈 to
allow for the time element of the specification.
3. Airflow, if available, works wonders. This is not
the place for a dissertation on how to perform
airflow calculations, but even a few LFM (linear
feet per minute) of air will cool a MOSFET down
dramatically. If you can position the MOSFET(s)
in question near the inlet of a power supplys fan,
or the outlet of a processors cooling fan, thats
always a good free ride.
4. Although it seems a rather unsatisfactory
statement, the best test of a surface-mount
MOSFET for an application (assuming the above
tips show it to be a likely fit) is an empirical one.
The ideal evaluation is in the actual layout of the
expected final circuit, at full operating current. The
use of a thermocouple on the drain leads, or in
infrared pyrometer on the package, will then give
a reasonable idea of the devices junction
temperature.
MOSFET Transient Thermal Issues
Having chosen a MOSFET that will withstand the imposed
voltage stresses, and be able to handle the worst-case
continuous I
2
R power dissipation which it will see, it
remains only to verify the MOSFETs ability to handle
short-term overload power dissipation without
overheating. Here, nature and physics work in our favor: a
MOSFET can handle a much higher pulsed power without
damage than its continuous dissipation ratings would
imply. The reason for this is that, like everything else,
semiconductor devices (silicon die, lead frames, etc.)
have thermal inertia. This is easily understood by all of us
who have stood waiting for a pot of water to boil.
In terms related directly to the specification and use of
power MOSFETs, this is known as transient thermal
impedance. Almost all power MOSFET data sheets give
a Transient Thermal Impedance Curve, which is a handy
tool for making sure that you can safely get by with a less
expensive MOSFET than you thought you might need.
For example, take the case where t
FLT
for the 5V supply
has been set to 50ms, I
LOAD(CONT,MAX)
is 5.0A, the slow-trip
threshold is 50mV nominal, and the fast-trip threshold is
100mV. If the output is connected to a 0.60& load, the
output current from the MOSFET for the slot in question
will be regulated to 5.0A for 50ms before the parts circuit
breaker trips. During that time, the dissipation in the
MOSFET is given by:
[
] 2V
5A(0.6&A
5V
E
I
E
P
MOSFET
=
)
50ms
for
10W
5A
2V
P
MOSFET
=
Wow! Looks like we need a really hefty MOSFET to
withstand just this unlikelybut plausible enough to
protect againstfault condition. Or do we? This is where
the transient thermal impedance curves become very
useful. Figure 10 shows those curves for the Vishay
(Siliconix) Si4430DY, a commonly used SO-8 power
MOSFET.
10
-4
10
-3
10
-2
10
-1
1
10
100
600
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Imperance, Juction-to-Ambient
1. Duty Cycle, D =
2. Per Unit Base = R
qJA
= 67癈/W
3. T
JM
T
A
= P
DM
Z
qJA
(t)
4. Surface Mounted
t
1
t
2
t
1
t
2
Notes:
P
DM
Square Wave Pulse Duration (sec)
Figure 10. Si4430DY MOSFET Transient Thermal Impedance Curve
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