參數(shù)資料
型號(hào)： MH8D64AKQC-10
廠商： Mitsubishi Electric Corporation
英文描述： JT 55C 55#20 SKT PLUG
中文描述： 536870912位（8388608字，64位），雙數(shù)據(jù)速率同步DRAM模塊
文件頁(yè)數(shù)： 5/40頁(yè)
文件大?。?/td> 340K
代理商： MH8D64AKQC-10
MH8D64AKQC-75,-10
536,870,912-BIT (8,388,608-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module
MIT-DS-0419-0.1
17.May.2001
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MITSUBISHI
ELECTRIC
5
BASIC FUNCTIONS
The MH8D64AKQC provides basic functions, bank (row) activate, burst read / write, bank (row)
precharge, and auto / self refresh. Each command is defined by control signals of /RAS, /CAS
and /WE at CLK rising edge. In addition to 3 signals, /CS ,CKE and A10 are used as chip
select, refresh option, and precharge option, respectively. To know the detailed definition of
commands, please see the command truth table.
/S0
Chip Select : L=select, H=deselect
/RAS
Command
/CAS
Command
/WE
Command
CKE0
Refresh Option @refresh command
A10
Precharge Option @precharge or read/write command
CK0
define basic commands
Activate (ACT) [/RAS =L, /CAS =/WE =H]
ACT command activates a row in an idle bank indicated by BA.
Read (READ) [/RAS =H, /CAS =L, /WE =H]
READ command starts burst read from the active bank indicated by BA. First output data
appears after /CAS latency. When A10 =H at this command, the bank is deactivated after the
burst read (auto-precharge,
READA
)
Write (WRITE) [/RAS =H, /CAS =/WE =L]
WRITE command starts burst write to the active bank indicated by BA. Total data length to be
written is set by burst length. When A10 =H at this command, the bank is deactivated after
the burst write (auto-precharge,
WRITEA
).
Precharge (PRE) [/RAS =L, /CAS =H, /WE =L]
PRE command deactivates the active bank indicated by BA. This command also terminates
burst read /write operation. When A10 =H at this command, all banks are deactivated
(precharge all,
PREA
).
Auto-Refresh (REFA) [/RAS =/CAS =L, /WE =CKE0 =H]
REFA command starts auto-refresh cycle. Refresh address including bank address are
generated internally. After this command, the banks are precharged automatically.
/CK0
相關(guān)PDF資料
PDF描述
MH8D64AKQC-75 Circular Connector; No. of Contacts:21; Series:MS27484; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:22; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:22-21 RoHS Compliant: No
MH8V7245BAZTJ-5 Circular Connector; No. of Contacts:5; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:14; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:14-5
MH8V7245BWZTJ-5 Circular Connector; Body Material:Aluminum; Series:PT00; No. of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket; Insert Arrangement:14-5
MH8V7245BAZTJ-6 HYPER PAGE MODE 603979776 - BIT ( 8388608 - WORD BY 72 - BIT ) DYNAMIC RAM
MH8V7245BWZTJ-6 Circular Connector; Body Material:Aluminum; Series:PT00; No. of Contacts:23; Connector Shell Size:16; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MH8D64AKQC-75 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:536,870,912-BIT (8,388,608-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module
MH-8F 功能描述:通用繼電器 RoHS:否 制造商:Omron Electronics 觸點(diǎn)形式:1 Form A (SPST-NO) 觸點(diǎn)電流額定值:150 A 線圈電壓:24 VDC 線圈電阻:144 Ohms 線圈電流:167 mA 切換電壓:400 V 安裝風(fēng)格:Chassis 觸點(diǎn)材料:
MH8S64AQFC-6 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:536,870,912-BIT (8,388,608 - WORD BY 64-BIT)SynchronousDRAM
MH8S64AQFC-6L 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:536,870,912-BIT (8,388,608 - WORD BY 64-BIT)SynchronousDRAM
MH8S64AQFC-7 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:536,870,912-BIT (8,388,608 - WORD BY 64-BIT)SynchronousDRAM
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