參數(shù)資料
型號： MH8D64AKQC-10
廠商： Mitsubishi Electric Corporation
英文描述： JT 55C 55#20 SKT PLUG
中文描述： 536870912位（8388608字，64位），雙數(shù)據(jù)速率同步DRAM模塊
文件頁數(shù)： 36/40頁
文件大小： 340K
代理商： MH8D64AKQC-10
MH8D64AKQC-75,-10
536,870,912-BIT (8,388,608-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module
MIT-DS-0419-0.1
17.May.2001
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MITSUBISHI
ELECTRIC
36
Serial Presence Detect Table I
Byte
Function described
SPD enrty data
SPD DATA(hex)
0
Number of Serial PD Bytes Written during Production
128
80
1
Total # bytes of SPD memory device
256 Bytes
08
2
Fundamental memory type
SDRAM DDR
07
0C
09
3
# Row Addresses on this assembly
12
4
# Column Addresses on this assembly
9
5
# Module Banks on this assembly
1BANK
01
6
Data Width of this assembly...
x64
0
40
7
... Data Width continuation
00
8
Voltage interface standard of this assembly
SDRAM Cycletime at Max. Supported CAS Latency (CL).
SSTL2.5V
7.5ns
04
75
80
9
Cycle time for CL=2.5
10
SDRAM Access from Clock
tAC for CL=2.5
11
DIMM Configuration type (Non-parity,Parity,ECC)
None-parity,Non-ECC
00
80
12
Refresh Rate/Type
13
SDRAM width,Primary DRAM
x16
10
14
Error Checking SDRAM data width
MIimum Clock Delay, Random Column Access
N/A
00
15
01
16
Burst Lengths Supported
Number of Device Banks
2, 4, 8
0E
04
0C
17
4bank
2.0, 2.5
0
18
CAS# Latency
19
CS# Latency
20
WE Latency
21
SDRAM Module Attributes
20
22
SDRAM Device Attributes:General
VDD + 0.2V
00
23
SDRAM Cycle time(2nd highest CAS latency)
Cycle time for CL=2
24
SDRAM Access form Clock(2nd highest CAS latency)
80
tAC for CL=2
25
SDRAM Cycle time(3rd highest CAS latency)
26
SDRAM Access form Clock(3rd highest CAS latency)
27
Minimum Row Precharge Time (tRP)
15ns
50
28
Minimum Row Active to Row Active Delay (tRRD)
20ns
3C
8.0ns
-10
10ns
A0
75
-75
29
RAS to CAS Delay Minv (tRCD)
20ns
2D
30
Active to Precharge Min (tRAS)
32
+0.75ns
+0.8 ns
-75
-10
-75
-10
-75
-10
-75
-10
45ns
50ns
+0.75ns
+0.8ns
Differential Clock
75
80
00
50
15.625uS/SR
1
02
01
1 clock
10ns
A0
-75
-10
-75
-10
Undefined
Undefined
Undefined
Undefined
00
00
00
相關(guān)PDF資料
PDF描述
MH8D64AKQC-75 Circular Connector; No. of Contacts:21; Series:MS27484; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:22; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:22-21 RoHS Compliant: No
MH8V7245BAZTJ-5 Circular Connector; No. of Contacts:5; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:14; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:14-5
MH8V7245BWZTJ-5 Circular Connector; Body Material:Aluminum; Series:PT00; No. of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket; Insert Arrangement:14-5
MH8V7245BAZTJ-6 HYPER PAGE MODE 603979776 - BIT ( 8388608 - WORD BY 72 - BIT ) DYNAMIC RAM
MH8V7245BWZTJ-6 Circular Connector; Body Material:Aluminum; Series:PT00; No. of Contacts:23; Connector Shell Size:16; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MH8D64AKQC-75 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:536,870,912-BIT (8,388,608-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module
MH-8F 功能描述:通用繼電器 RoHS:否 制造商:Omron Electronics 觸點形式:1 Form A (SPST-NO) 觸點電流額定值:150 A 線圈電壓:24 VDC 線圈電阻:144 Ohms 線圈電流:167 mA 切換電壓:400 V 安裝風(fēng)格:Chassis 觸點材料:
MH8S64AQFC-6 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:536,870,912-BIT (8,388,608 - WORD BY 64-BIT)SynchronousDRAM
MH8S64AQFC-6L 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:536,870,912-BIT (8,388,608 - WORD BY 64-BIT)SynchronousDRAM
MH8S64AQFC-7 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:536,870,912-BIT (8,388,608 - WORD BY 64-BIT)SynchronousDRAM
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