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參數(shù)資料
| 型號(hào)： | MGP7N60ED |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Insulated Gate Bipolar Transistor withr Anti-Parallel Diode |
| 中文描述： | 10 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大?。?/td> | 144K |
| 代理商： | MGP7N60ED |
5
Motorola IGBT Device Data
Figure 11. Turn–Off Losses versus
Junction Temperature
Figure 12. Turn–Off Losses versus
Collector Current
Figure 13. Forward Characteristics
versus Current
Figure 14. Reverse Biased Safe
Operating Area
VFM, FORWARD VOLTAGE DROP (VOLTS)
0.5
10
1
I
1
2
2.5
TJ = 125
°
C
25
°
C
1.5
C
3
150
0
TJ, JUNCTION TEMPERATURE (
°
C)
0.3
0.5
0.2
0.1
0
50
25
75
100
125
0.4
VCC = 360 V
VGE = 15 V
RG = 20
IC = 5.0 A
3.75 A
2.5 A
,
E
5
7
0
IC, COLLECTOR CURRENT (AMPS)
0.6
0.4
0.3
0.2
0.1
0
6
1
2
3
4
,
E
8
0.5
VCC = 360 V
VGE = 15 V
RG = 20
TJ = 125
°
C
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
1
100
10
1
I
10
100
1000
VGE = 15 V
RGE = 20
TJ = 125
°
C
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