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參數(shù)資料
| 型號： | MGP7N60ED |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Insulated Gate Bipolar Transistor withr Anti-Parallel Diode |
| 中文描述： | 10 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 144K |
| 代理商： | MGP7N60ED |
3
Motorola IGBT Device Data
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(IEC = 2.3 Adc)
(IEC = 2.3 Adc, TJ = 125
°
C)
(IEC = 4.6 Adc)
VFEC
—
—
—
1.7
1.3
2.0
—
—
2.3
Vdc
Reverse Recovery Time
(IF = 4.6 Adc,
VR= 360 Vdc
VR = 360 Vdc,
dIF/dt = 200 A/ s)
4 6 Ad
trr
ta
—
40
—
ns
—
17
—
tb
—
23
—
Reverse Recovery Stored Charge
QRR
trr
ta
tb
QRR
—
60
—
nC
Reverse Recovery Time
(IF= 4 6 Adc
(IF = 4.6 Adc,
VR = 360 Vdc,
dIF/dt = 200 A/ s,
TJ= 125
TJ = 125
°
C)
—
105
—
ns
—
36
—
—
69
—
Reverse Recovery Stored Charge
—
247
—
nC
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25
″
from package to emitter bond pad)
LE
—
7.5
—
nH
Figure 1. Output Characteristics
Figure 2. Output Characteristics
Figure 3. Transfer Characteristics
Figure 4. Collector–To–Emitter Saturation
Voltage versus Junction Temperature
8
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
15
20
10
I
5
0
3
1
2
4
5
6
7
8
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
15
20
10
I
5
0
3
1
2
4
5
6
7
TJ = 25
°
C
VGE = 10 V
12.5 V
15 V
17.5 V
20 V
TJ = 125
°
C
VGE = 10 V
12.5 V
15 V
17.5 V
20 V
10
12
5
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
12
8
6
4
2
0
TJ, JUNCTION TEMPERATURE (
°
C)
–25
–50
2.2
1.8
1.6
1.4
1.2
1.0
0
11
V
6
7
8
9
25
50
75
100
125
150
I
13
10
2.0
IC = 5.0 A
3.75 A
2.5 A
TJ = 125
°
C
25
°
C
V
VCE = 100 V
5 S PULSE WIDTH
VGE = 15 V
80 S PULSE WIDTH
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